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A self-frequency-doubled KTiOAsO4 (KTA) Raman laser is realized in a diode-end-pumped acousto-optically Q-switched intracavity Raman laser configuration. A 30-mm-long x-cut KTA crystal is used as the Raman medium, and its 671 cm(-1) Raman mode is employed to finish the conversion from 1064 nm fundamental laser to 1146 nm Raman laser. Self-frequency doubling of the Raman laser is accomplished in the same KTA crystal, and a 573 nm yellow laser is obtained. With an incident diode power of 10.9 W and a pulse repetition rate of 20.8 kHz, a yellow-laser power of 0.82 W is obtained. The conversion efficiency from diode power to yellow-laser power is 7.5%.

The efficient second-Stokes generation at 1120 nm is obtained from a KTiOAsO4 (KTA) crystal. The relative Raman scattering cross sections of KTA with respect to YVO4 are determined by studying their spontaneous Raman scattering spectra at room temperature. A 30-mm-long KTA crystal is placed inside the cavity of a diode-end-pumped acousto-optically Q-switched Nd:YAG laser. With a pump power of 6.7 W and a pulse repetition rate of 20 kHz, the second-Stokes (1120 nm) power of 0.63 W is obtained, corresponding to a diode-to-second-Stokes conversion efficiency of 9.4%.