Among variety of 1-D materials, ZnO nanowires (NWs) has attracted extensive attention due to its specific physical properties. For wide-ranging applications in nanoscale electronic devices, p-type ZnO NWs even have excellent electrical properties. In this work, ZnO NWs were synthesized with P2O5 as a dopant source via the hydrothermal method which used zinc acetate and hexamethylenetetramine (HMTA) mixed solution as the precursor. The morphology and aspect ratio of aligned phosphorus-doped ZnO NWs arrays were examined by field emission scanning electron microscope (FESEM). The effect of various phosphorus-doped concentration were systematically discussed. The X-ray diffractometer (XRD) and the high resolution transmission electron microscope (HRTEM) image indicated that the NWs are single-crystalline with <0001> growth direction. The results of temperature-dependent photoluminescence (PL) spectra revealed that both phosphorus-doped and undoped ZnO NWs show a UV light emission (370–380 nm) and a defect-related emission (400–750 nm). The phosphorus-doped ZnO NWs enhanced defect-related emission intensity. The electrical transport properties and field effect transistors (FETs) confirmed that p-type conductivity of the single phosphorus-doped ZnO NW. The phosphorus-doped ZnO NWs were successfully synthesized by hydrothermal method and showed characteristics of the p-type conductivity.
For the development of high density memory arrays of resistive random access memory (RRAM), nanowires provide the potential to reduce the device size to overcome the limitation of conventional lithography. In this work, copper oxide nanowires were synthesized and served as the building block for 1-D RRAM nanodevice. The phase of Copper oxide was identified to be CuO by selected area electron diffraction (SAED) patterns and energy dispersive spectrometer (EDS). We fabricated the Au/CuO-nanowire/Au RRAM nanodevice by electron-beam lithography techniques. From I-V measurement, the forming voltage and RESET voltage were 0.64 V and 5.2 V, respectively. This low forming voltage and ultra-high reset voltage may result from stacking fault in the core of CuO nanowires. From scanning electron microscope (SEM) image ,the as-formed protrusion near the anode and reduction near the cathode after several electrical measurements indicated that the diffusion of oxygen vacancies generating the conducting filament from cathode, result in the change of nanowire morphology. The result will be beneficial to understand the switching properties of nonvolatile memory device at nanoscale.
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