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Universal features of I–V characteristics of one-dimensional arrays of normal metal tunnel junctions have been tested against inhomogenities in the junction parameters, number of junctions in the array, and magnetic field. We find that the differential conductance versus bias voltage obeys the analytic form to within 1% if the fabrication errors are smaller than 10% in junction areas, and if the array has more than ten junctions. Furthermore, the universal relation is insensitive to magnetic field at least up to 8 T.

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