A morphological model is given for the anodic oxidation of n-type silicon in fluoride containing solution in a potentiostatic arrangement. An earlier introduced macroscopic version of the model is extended from temporal to spatio-temporal resolution using a cellular automate. The prediction of the macroscopic model that lattice mismatch between silicon and its oxide leads to stress and stress leads to two types of oxides in the case of photocurrent oscillation is approved by the cellular automate model. The oxide types differ in stability against the etching process. Both oxide types are arranged in clusters which alternate at the electrode surface. Each cluster is in the size of 80-100 nm.
The development of nanopore morphology at the Si/electrolyte contact is considered during the anodic oxidation of n-type silicon in fluoride containing solutions. The applied morphological model is characterized by stress in silicon and cracks and nanopores in silicon oxide. We present the "Thickness Oscillator Model" in macroscopic and microscopic formulation. For the temporarily resolved macroscopic model, a relation between the integral equation used for calculation of the so-called synchronization states and the Helmholtz differential equation is presented. The nanopore morphology during current oscillations is measured by high resolution scanning electron microscopy and calculated using the microscopic model in the form of a spatio-temporarily resolved two-dimensional cellular automate. Two types of silicon oxide with different nanopore densities are visible which are shown to be the physical origin of the synchronization of the oscillations.
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