Long, nanometer-size metallic wires can be synthesized by injection of the conducting melt into nanochannel insulating plates. Large-area arrays of parallel wires 200 nanometers in diameter and 50 micrometers long with a packing density of 5 x 10(8) per square centimeter have been fabricated in this way. When charged, the ends of the wires generate strong, short-range electric fields. The nanowire electric fields have been imaged at high spatial resolution with a scanning force microscope.
The authors report on the Raman scattering spectra and fundamental absorption edge of dense semiconductor-insulator nanocomposites. These were synthesized by injection of the semiconducting melt into the channels of dielectric matrices. The Raman spectra exhibit shifts, broadenings, and asymmetries consistent with phonon confinement in nanometre-size shifts, broadenings, and asymmetries consistent with phonon confinement in nanometre-size semiconductor crystallites. Nanoscale networks of small effective mass semiconductors show evidence for electron confinement as manifested by a blue shift of the fundamental absorption edge.
Raman scattering measurements have been performed on semiconductor-insulator nanocomposites in which the semiconducting phase occupies a significant (30%) volume fraction. The composites have been synthesized by high pressure injection of the conducting melt into the nanochannels of commercially available insulating matrices. The optical phonon spectra of GaSb- and Te-SiO2 composites exhibit shifts, broadenings, and asymmetries when compared to those of the semiconducting bulk. These are interpreted in terms of strains and phonon confinement in the microcrystalline semiconducting phase. Xray diffraction measurements allow us to correlate the effects of crystallite size and strains on the optical modes of the composites.
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