We review our approach to the generation of nanoporous materials, both semiconducting and metallic, which leads to the existence of nanopores within the bulk structure. This method, which we have named as the expanding lattice method, is a novel transferable approach which consists first of constructing crystalline supercells with a large number of atoms and a density close to the real value and then lowering the density by increasing the volume. The resulting supercells are subjected to either ab initio or parameterized—Tersoff-based—molecular dynamics processes at various temperatures, all below the corresponding bulk melting points, followed by geometry relaxations. The resulting samples are essentially amorphous and display pores along some of the “crystallographic” directions without the need of incorporating ad hoc semiconducting atomic structural elements such as graphene-like sheets and/or chain-like patterns (reconstructive simulations) or of reproducing the experimental processes (mimetic simulations). We report radial (pair) distribution functions, nanoporous structures of C and Si, and some computational predictions for their vibrational density of states. We present numerical estimates and discuss possible applications of semiconducting materials for hydrogen storage in potential fuel tanks. Nanopore structures for metallic elements like Al and Au also obtained through the expanding lattice method are reported.
As in our previous work [1] nanoporous silicon periodic supercells with 1000 atoms but now with 80 % porosity were constructed using the Tersoff potential and our novel approach [2]. The approach consists first in constructing a crystalline diamond-like supercell with a density (volume) close to the real value, and then lowering the density by increasing the volume, subjecting the resulting periodic supercell to Tersoff-based molecular dynamics processes at a temperature of 300 K, followed by geometry relaxation [1]. As in the ab initio approach [2] the resulting samples are also essentially amorphous and display pores along some of the crystallographic directions. We report the radial (pair) distribution function (RDF), g(r), the bond angle distribution, the pore structure where prominent and a computational prediction for the vibrational density of states for this structure. We then compare it to the 50 % porous sample presented in Ref [1]. The soft acoustic phonons are displaced towards lower energy in the 80 % porosity sample whereas the optical modes are displaced towards higher energies. The pseudo gap, existing in the 50 % porous sample, is depleted even more in the 80 % sample indicating a tendency towards the creation of a phonon gap for higher porosity materials. Some conjectures that point to the possible engineering of porous materials to produce predetermined phonon properties are discussed.
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