A microscopic theory of the transport properties of quantum point contacts giving a unified description of the normal conductor-superconductor (N-S) and superconductor-superconductor (S-S) cases is presented. It is based on a model Hamiltonian describing charge transfer processes in the contact region and makes use of non-equilibrium Green function techniques for the calculation of the relevant quantities. It is explicitly shown that when calculations are performed up to infinite order in the coupling between the electrodes, the theory contains all known results predicted by the more usual scattering approach for N-S and S-S contacts. For the latter we introduce a specific formulation for dealing with the non-stationary transport properties. An efficient algorithm is developed for obtaining the dc and ac current components, which allows a detailed analysis of the different current-voltage characteristics for all range of parameters. We finally address the less understood small bias limit, for which some analytical results can be obtained within the present formalism. It is shown that four different physical regimes can be reached in this limit depending on the values of the inelastic scattering rate and the contact transmission. The behavior of the system in these regimes is discussed together with the conditions for their experimental observability.

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We investigate the Josephson coupling between two singlet superconductors separated by a half-metallic magnet. The mechanism behind the coupling is provided by the rotation of the quasiparticle spin in the superconductor during reflection events at the interface with the half metal. Spin rotation induces triplet correlations in the superconductor which, in the presence of surface spin-flip scattering, results in an indirect Josephson effect between the superconductors. We present a theory appropriate for studying this phenomenon and calculate physical properties for a superconductor/half-metal/superconductor heterostructure.

Metal nanostructures act as powerful optical antennas because collective modes of the electron fluid in the metal are excited when light strikes the surface of the nanostructure. These excitations, known as plasmons, can have evanescent electromagnetic fields that are orders of magnitude larger than the incident electromagnetic field. The largest field enhancements often occur in nanogaps between plasmonically active nanostructures, but it is extremely challenging to measure the fields in such gaps directly. These enhanced fields have applications in surface-enhanced spectroscopies, nonlinear optics and nanophotonics. Here we show that nonlinear tunnelling conduction between gold electrodes separated by a subnanometre gap leads to optical rectification, producing a d.c. photocurrent when the gap is illuminated. Comparing this photocurrent with low-frequency conduction measurements, we determine the optical frequency voltage across the tunnelling region of the nanogap, and also the enhancement of the electric field in the tunnelling region, as a function of gap size. The measured field enhancements exceed 1,000, consistent with estimates from surface-enhanced Raman measurements. Our results highlight the need for more realistic theoretical approaches that are able to model the electromagnetic response of metal nanostructures on scales ranging from the free-space wavelength, λ, down to ∼λ/1,000, and for experiments with new materials, different wavelengths and different incident polarizations.

Highly conductive molecular junctions were formed by direct binding of benzene molecules between two Pt electrodes. Measurements of conductance, isotopic shift in inelastic spectroscopy, and shot noise compared with calculations provide indications for a stable molecular junction where the benzene molecule is preserved intact and bonded to the Pt leads via carbon atoms. The junction has a conductance comparable to that for metallic atomic junctions (around 0:1-1G 0 ), where the conductance and the number of transmission channels are controlled by the molecule's orientation at different interelectrode distances.

Radiative transfer of energy at the nanometre length scale is of great importance to a variety of technologies including heat-assisted magnetic recording, near-field thermophotovoltaics and lithography. Although experimental advances have enabled elucidation of near-field radiative heat transfer in gaps as small as 20-30 nanometres (refs 4-6), quantitative analysis in the extreme near field (less than 10 nanometres) has been greatly limited by experimental challenges. Moreover, the results of pioneering measurements differed from theoretical predictions by orders of magnitude. Here we use custom-fabricated scanning probes with embedded thermocouples, in conjunction with new microdevices capable of periodic temperature modulation, to measure radiative heat transfer down to gaps as small as two nanometres. For our experiments we deposited suitably chosen metal or dielectric layers on the scanning probes and microdevices, enabling direct study of extreme near-field radiation between silica-silica, silicon nitride-silicon nitride and gold-gold surfaces to reveal marked, gap-size-dependent enhancements of radiative heat transfer. Furthermore, our state-of-the-art calculations of radiative heat transfer, performed within the theoretical framework of fluctuational electrodynamics, are in excellent agreement with our experimental results, providing unambiguous evidence that confirms the validity of this theory for modelling radiative heat transfer in gaps as small as a few nanometres. This work lays the foundations required for the rational design of novel technologies that leverage nanoscale radiative heat transfer.

A combined experimental and theoretical study is presented revealing the influence of metal-molecule coupling on electronic transport through single-molecule junctions. Transport experiments through tolane molecules attached to gold electrodes via thiol, nitro, and cyano anchoring groups are performed. By fitting the experimental current-voltage characteristics to a single-level tunneling model, we extract both the position of the molecular orbital closest to the Fermi energy and the strength of the metal-molecule coupling. The values found for these parameters are rationalized with the help of density-functional-theory-based transport calculations. In particular, these calculations show that the anchoring groups determine the junction conductance by controlling not only the strength of the coupling to the metal but also the position of the relevant molecular energy levels.