In this paper a method for obtaining states with negative temperature in semiconductors is discussed; as shown this method requires relatively small densities of excitation.Ac present three different methods ate proposed for obtaining the states with negative temperatures in semiconductors [1--3]. The impulse method put forward in the paper [1] for obtaining such states is based on a considerable difference of the time of recombination and the slowing-down time of nonequilibrium carriers in the bands [4]. The conditions for producing the states with negative temperatures with these methods ate as follows: large lifetimes of nonequilibrium carriers, high densities of excitation and low temperatures of the sample [5]. All this strongly restricts selection of the semiconductors and creates a number of technical difficulties.The method of obtaining the states with negative temperatures in semiconductors proposed in the paper by B. LAx [2] is based on the Landau levels not being equidistant in strong magnetic fields. The comparatively short times of relaxation of the noncquilibrium carriers of these levels make ir difficult to create the states with negative temperatures using the above method.In the present paper the method for obtaining states with negative temperatures in semiconductors put forward in the paper [3] will be studied in detail. As it will be shown below, this method requires relatively small densities of excitation.
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