An Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As asymmetric dual-quantum-well structure was designed. The barrier thickness between the dual quantum wells is 48Å, it is thick enough to inhibit the mutual cross-interference between the energy levels within the two quantum wells. This material system was grown on a GaAs substrate by solid source molecular beam epitaxy, and the device was fabricated with rat electrodes using inductively coupled plasma etching mesa process. The tunneling effect that electron transfer through the dual-quantum-well structure was observed in the device I-V feature, it was calculated and demonstrated by transmission matrix method and Ariy Function numerical transform.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.