This work presents the first experimental study on capacitances, charges and power-switching figure-of-merits (FOMs) for a large-area vertical GaN power transistor. A 1.2 kV, 5 A GaN vertical power FinFET was demonstrated in a chip area of 0.45 mm 2 , with a specific on-resistance of 2.1 mΩ•cm 2 and a threshold voltage of 1.3 V. Device junction capacitances were characterized and their main components were identified. This was used to calculate the switching charges and practical switching frequencies. Device FOMs were then derived that take into account the trade-offs between conduction and switching power losses. Our GaN vertical FinFETs exhibit high frequency (~MHz) switching capabilities and superior switching FOMs when compared to commercial 0.9-1.2 kV Si and SiC power transistors. This work shows the great potential of GaN vertical FinFETs for next-generation medium-voltage power electronics.
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