Exchange bias effect in NiMnSb/CrN heterostructures deposited by magnetron sputtering J. Appl. Phys. 113, 17D723 (2013); 10.1063/1.4798373 Nanostructured MnGa films on Si/SiO2 with 20.5 kOe room temperature coercivity J. Appl. Phys. 110, 093902 (2011); 10.1063/1.3656457 Reducing average grain and domain size in high-coercivity Co ∕ Pd perpendicular magnetic recording media through seedlayer engineering J. Appl. Phys. 97, 10N118 (2005); 10.1063/1.1855206 Effect of microstructure on the magnetic properties of L1 0 CoPt-20 at. %C magnetic thin film
Pure and Mn-doped barium titanate nanofibers were synthesized by the electrospinning method. The morphology, microstructure and crystal structure of as-spun and annealed composite nanofibers were characterized by scanning electron microscopy and transmission electron microscopy. After annealing at 850°C, we obtain nanofibers a few μm long, formed by nanoparticles of irregular shape with sizes around 100 nm. X-ray diffraction and Raman spectroscopy show that a partial phase transition from tetragonal to hexagonal takes place for BaTi 0.90 Mn 0.10 O 3 . Vibrational phonon modes were calculated for BaTiO 3 within the density functional theory (DFT) framework. Ferroelectricity has been probed on pure and Mn-doped BaTiO 3 nanofibers, by means of piezoresponse force microscopy in an atomic force microscope, confirming the polar domain switching behavior of the fibers. The measured piezoelectric coefficient d 33 were 31 and 22 pm/V for BaTiO 3 and BaTi 0.90 Mn 0.10 O 3 . Magnetic properties of the samples were probed in a superconducting quantum interference device. Diamagnetic and paramagnetic behaviors were found in pure and Mn-doped samples, respectively. K E Y W O R D S atomic force microscopy, barium titanate, electrospinning, ferroelectricity/ferroelectric materials, perovskites
Tetragonal Mn 3 Ga thin films were epitaxially grown with and without strain on Cr and Mo crystalline buffer layers, respectively, using rf-magnetron sputtering. Epilayers grown on Cr with a lattice mismatch of 4.16%, exhibit a high magnetization of 220 kAm −1 and high perpendicular magnetic anisotropy. These characteristics are attributed to interfacial strain. Additionally, a soft ferromagnetic component is observed in these films but not in relaxed layers grown on Mo, where Δa/a is −0.1%. These latest films exhibit a low magnetization of 80 kAm −1 and both perpendicular and in-plane magnetic anisotropies. We propose that high spin orbit coupling of Mo-5s 1 4d 5 orbitals from the buffer layer and strong hybridization with Mn 3+-3d 4 orbitals from the magnetic layer are at the origin of in-plane anisotropy at the interface, while Mn 3 Ga magnetocrystalline anisotropy leads to perpendicular anisotropy on the rest of the film.
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