The properties of interfaces between normal (N) and ferromagnetic (F) metals, described by enhanced specific resistance, ARF/N∗ (A=area, R=resistance), and scattering asymmetry, γF/N, are of interest to optimize current-perpendicular-to-plane (CPP) magnetoresistance (MR) and current-induced magnetization-switching (CIMS) in nanopillars. Sputtered standard Py/Cu, Co/Cu, and Fe/Cr interfaces have 2ARF/N∗∼1 fΩ m2 and γF/N∼0.7 at 4.2 K. Recently, sputtered F/Al interfaces with F=Py, Co, Fe, and Co91Fe9 were found to have very large 2ARF/Al∗∼9 fΩ m2, but small γF/Al≤0.1. In hopes of finding interfaces with both large 2ARF/N∗ and larger γF/N than for F/Al, the authors examined four new sputtered F/N pairs, Py/Pd, Fe/V, Fe/Nb, and Co/Pt, where the N metals all have fairly long spin-diffusion lengths, and the crystal structures of the F and N metals are matched. With the exception of Py/Pd, where 2ARPy/Pd∗ is smaller, all the other values of both 2ARF/N∗ and the magnitudes of γF/N for these new pairs lie between those for Co/Cu and F/Al. Unfortunately, these combinations of 2ARF/N∗ and γF/N mean that none of these pairs is superior to standard pairs for devices.
Two halogenated nitrobenzene derivatives have been characterized. The substitution of a Br substituent by an I atom modifies the network of halogen bonds, and gives rise to the formation of non-classical Brδ+⋯Iδ- bonds.
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