In this paper a Monte Carlo investigation of Graded Channel (GC) Silicon-On-Insulator MOSFETs is presented. The influence of the length of the lightly-doped region of the channel (L LD ) on the microscopic transport properties is exhaustively analyzed. Result show that increasing L LD provides an enhancement of the device performance in terms of drain current and transconductance. However, for L LD values larger than half of the channel the benefits are minimized from a microscopic point of view due to the increasing tendency of the device to behave as a lightly doped conventional transistor. This suggests the existence of an optimum L LD value to fully benefit from the improvements provided by GC doping techniques. Graded Channel MOSFET, Monte Carlo simulation, Fully Depleted SOI, microscopic transport (key words)
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