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A new homoleptic Co(II) complex bearing two highly sterically congested 2-formiminopyrrolyl N,N’-chelating ligands is reported, displaying slow relaxation of the magnetisation at zero static (DC) field. This compound shows large...

GaMo4S8, is a poorly known lacunar spinel where skyrmions have only been reported very recently. It belongs to the AM4X8 family, where A is a post-transition metal, M is a...

Vaesite, a nickel chalcogenide with NiS2 formula, has been synthetized and studied by theoretical and experimental methods. NiS2 was prepared by solid-state reaction under vacuum and densified by hot-pressing, at different consolidation conditions. Dense single-phase pellets (relative densities >94%) were obtained, without significant lattice distortions for different hot-pressing conditions. The thermal stability of NiS2 was studied by thermogravimetric analysis. Both as-synthetized and hot-pressed NiS2 have a single phase nature, although some hot-pressed samples had traces of the sulfur deficient phase, Ni1-xS (<1%vol), due to the strong desulfurization at T > 340ºC. The electronic band structure and density of states were calculated by Density Functional Theory (DFT), indicating a metallic behavior. However, the electronic transport measurements showed p-type semiconductivity for bulk NiS2, verifying its characteristic behavior has a Mott insulator. The consolidation conditions strongly influence the electronic properties, with the best room-temperature Seebeck coefficient, electrical resistivity and power factor being 182µVK-1, 2257μΩm and 14.1µWK-2m-1, respectively, pointing this compound as a good starting point for a new family of thermoelectric materials.

As the search continues for novel, cheaper, more sustainable, and environmentally friendly thermoelectric materials in order to expand the range of applications of thermoelectric devices, the tetrahedrite mineral (Cu12Sb4S13) stands out as a potential candidate due to its high abundance, low toxicity, and good thermoelectric performance. Unfortunately, as most current thermoelectric materials achieve zTs above 1.0, ternary tetrahedrite is not a suitable alternative. Still, improvement of its thermoelectric performance has been achieved to zTs ≈ 1 via isovalent doping and composition tuning, but most studies were limited to a single doping element. This project explores the effects of simultaneous doping with nickel and selenium in the thermoelectric properties of tetrahedrite. Simulated properties for different stoichiometric contents of these dopants, as well as the measured thermoelectric properties of the correspondent materials, are reported. One of the samples, Cu11.5Ni0.5Sb4S12.5Se0.5, stands out with a high power factor = 1279.99 µW/m·K2 at 300 K. After estimating the thermal conductivity, a zT = 0.325 at 300 K was obtained for this composition, which is the highest for tetrahedrites for this temperature. However, analysis of the weighted mobility shows the presence of detrimental factors, such as grain boundaries, disorder, or ionized impurity scattering, pointing to the possibility of further improvements.

Cu4O(SeO3)3 is a copper-oxo-selenite belonging to the CuxO(SeO3)(x–1) family of the topological chiral magnet Cu2OSeO3. We report magnetometry and specific heat data measured in a monoclinic Cu4O(SeO3)3 single crystal grown through a Chemical Vapour Transport (CVT) reaction. Our study shows a typical antiferromagnetic behaviour, with a Néel temperature TN = 58 K, similar to that of the Cu2OSeO3 and an additional transition at 13 K. The effective magnetic moment per Cu atom is 1.84 μB, close to the expected theoretical value for Cu2+. The low-temperature M(H) curves, show a transition starting at Hc1 ~ 400 Oe at 1.8 K shifting to a lower value of ~ 280 Oe at 30 K, likely from a helical into a conical intermediate phase, and a second transition at Hc2 ~ 1 kOe, above which the net moment increases linearly with applied field. The magnetisation moment value in a 90 kOe field is 0.053 μB/Cu at 1.8 K and attains a maximum value of 0.061 μB at 13 K. Low-temperature specific heat measurements confirm the presence of the magnetic transition at 13 K, slightly shifting to lower temperatures under an applied magnetic field.

Vaesite, a nickel chalcogenide with NiS2 formula, has been synthetized and studied by theoretical and experimental methods. NiS2 was prepared by solid-state reaction under vacuum and densified by hot-pressing, at different consolidation conditions. Dense single-phase pellets (relative densities >94%) were obtained, without significant lattice distortions for different hot-pressing conditions. The thermal stability of NiS2 was studied by thermogravimetric analysis. Both as-synthetized and hot-pressed NiS2 have a single phase nature, although some hot-pressed samples had traces of the sulfur deficient phase, Ni1-xS (<1%vol), due to the strong desulfurization at T > 340ºC. The electronic band structure and density of states were calculated by Density Functional Theory (DFT), indicating a metallic behavior. However, the electronic transport measurements showed p-type semiconductivity for bulk NiS2, verifying its characteristic behavior has a Mott insulator. The consolidation conditions strongly influence the electronic properties, with the best room-temperature Seebeck coefficient, electrical resistivity and power factor being 182µVK-1, 2257μΩm and 14.1µWK-2m-1, respectively, pointing this compound as a good starting point for a new family of thermoelectric materials.

Vaesite, a nickel chalcogenide with NiS2 formula, has been synthetized and studied by theoretical and experimental methods. NiS2 was prepared by solid-state reaction under vacuum and densified by hot-pressing, at different consolidation conditions. Dense single-phase pellets (relative densities >94%) were obtained, without significant lattice distortions for different hot-pressing conditions. The thermal stability of NiS2 was studied by thermogravimetric analysis. Both as-synthetized and hot-pressed NiS2 have a single phase nature, although some hot-pressed samples had traces of the sulfur deficient phase, Ni1-xS (<1%vol), due to the strong desulfurization at T > 340 °C. The electronic band structure and density of states were calculated by Density Functional Theory (DFT), indicating a metallic behavior. However, the electronic transport measurements showed p-type semiconductivity for bulk NiS2, verifying its characteristic behavior has a Mott insulator. The consolidation conditions strongly influence the electronic properties, with the best room-temperature Seebeck coefficient, electrical resistivity and power factor being 182 µVK−1, 2,257 µΩ m and 14.1 µWK−2 m−1, respectively, pointing this compound as a good starting point for a new family of thermoelectric materials.