Previous research on event cognition has found that walking through doorways can cause forgetting. The explanation for this finding is that there is a competition between event models, producing interference, and depressing performance. The current study explored the degree to which this might be affected by the natural aging process. This is of interest because there is some evidence that older adults have trouble coordinating sources of interference, which is what is thought to underlie this effect. This would suggest that older adults should do worse on this task. Alternatively, there is also evidence that older adults are typically not disrupted at the event level of processing per se. This would suggest that older adults should perform similarly to younger adults on this task. In the study reported here, younger and older participants navigated through a virtual environment, and memory was tested with probes either before or after a shift and for objects that were associated with the participant (i.e., just picked up). In general, both younger and older adults had memory disrupted after walking through a doorway. Importantly, the magnitude of this disruption was similar in the 2 age groups. This is consistent with the idea that processing at the event level is relatively unaffected by the natural aging process. (PsycINFO Database Record

p-n hetero-junction diode arrays were fabricated using specific direct techniques for the transfer of p-type single walled carbon nanotubes (SWCNTs) and aligned n-type SnO₂ nanowires (NWs) onto a patterned substrate surface. Their electronic and optoelectronic properties were characterized. Perpendicular crossings of the p- and the n-channels with each other were confirmed by transfer characteristics with respect to the bottom gate. The resulting diode showed a good rectifying behavior with a rectification ratio of over 10² at ±5 V, where the equivalent circuit model of a serially connected diode and resistor was used for analysis of the electrical properties. Both the forward and the reverse currents were observed to increase with the application of a positive gate bias, indicating an n-type gate dependence. Under a forward bias, the dominant contribution of the SnO₂ NW channel to the total resistance of the equivalent model is attributed to the n-type gate dependence since the resistance of the n-channel increased with a negative gate bias, resulting in the decrease of the forward current. Under a reverse bias, positive gate increased the concentration of valence electrons in the SWCNTs, enhancing direct tunneling to the conduction band of the SnO₂ NWs. High sensitivity to UV irradiation under the reverse bias was also demonstrated with a photosensitivity over 10², suggesting potential applicability of the hetero-junction diodes in optoelectronic devices.

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