Articles you may be interested inEffects of denuded zone of Si ( 111 ) surface on current conduction and charge trapping of HfO x N y gate dielectric in metal-oxide-semiconductor devices Appl. Phys. Lett. 85, 4723 (2004); 10.1063/1.1819994Effects of plasma nitridation of Al 2 O 3 interlayer on thermal stability, fixed charge density, and interfacial trap states of HfO 2 gate dielectric films grown by atomic layer deposition

A multi-bit digital weight cell for high-performance, inference-only non-GPU-like neuromorphic accelerators is presented. The cell is designed with simplicity of peripheral circuitry in mind. Non-volatile storage of weights which eliminates the need for DRAM access is based on FeFETs and is purely digital. The Multiply-and-Accumulate operation is performed using passive resistors, gated by FeFETs. The resulting weight cell offers a high degree of linearity and a large ON/OFF ratio.The key performance tradeoffs are investigated, and the device requirements are elucidated.

PACS 78.70.DmThis paper uses X-ray absorption spectroscopy to the study of electronic structure of the transition metal oxides TiO 2 , ZrO 2 and HfO 2 , Zr and Hf silicate alloys, and the complex oxides, GdScO 3 , DyScO 3 and HfTiO 4 . Qualitative and quantitative differences are identified between dipole allowed intra-atomic transitions from core p-states to empty d*-and s*-states, and inter-atomic transitions from transition metal and oxide 1s states to O 2p* that are mixed with transition metal d*-and s*-states for transition metal oxides and silicate alloys. The complex oxide studies have focused on the O K 1 edge spectra. Differences between the spectral peak energies of the lowest d*-features in the respective O K 1 spectra are demonstrated to scale with optical band gap differences for TiO 2 , ZrO 2 and HfO 2 , as well as the complex oxides providing important information relevant to applications of TM oxides as high-k gate dielectrics in advanced Si devices. This is demonstrated through scaling relationships between (i) conduction band offset energies between Si and the respective dielectrics, and the optical band gaps, and (ii) the optical band gaps, the conduction band offset energies, and the electron tunneling masses as functions of the atomic d-state energies of the transition metal atoms.

This article applies x-ray absorption spectroscopy to a study of the electronic structure of the high-k gate dielectrics, TiO2, ZrO2, and HfO2. Qualitative and quantitative differences are identified between intra-atomic transitions such as the Zr 3p-state, M2,3 core state absorptions which terminate in TM 4d*- and 5s*-states, and inter-atomic transitions such as the Zr 1s- and O 1s-state K1 absorptions which terminate in Zr 4d*- and 5s*-states that are mixed with O atom 2p* states through nearest neighbor bonding interactions. Differences between the spectral peak energies of the lowest d*-features in the O K1 spectra are demonstrated to scale with optical band gap differences for TiO2, ZrO2, and HfO2, providing important information relevant to applications of TM oxides as high-κ gate dielectrics in advanced Si devices. This is demonstrated through additional scaling relationships between (i) conduction band offset energies between Si and the respective dielectrics, and the optical band gaps, and (ii) the conduction band offset energies, and the electron tunneling masses as well.