We investigated scaling behaviors for NiO nanowire array devices with different nanowire diameters. Plots of the reset current and the third harmonic generation signal as a function of the on-state resistance (R0) show scaling behaviors for all devices, such as NiO film devices. However, the scaling exponents of NiO nanowire devices were different from those of NiO film devices, and hence the fractal dimension estimated from the scaling exponent was smaller for the NiO nanowire devices than for the NiO film devices. This decrease in the fractal dimension was attributed to the confinement of the conducting filaments within each nanowire.
We evaluated conducting filament distributions occurring at interfaces of TiN/TiOx/Pt and Pt/TiOx/TiOy/Pt bipolar resistive switching elements after electroforming by identifying bias-dependent low-frequency noise sources. The TiN/TiOx/Pt switching element showed higher noise features at low and high resistance states (LRS and HRS) than the Pt/TiOx/TiOy/Pt one. These behaviors are predominantly associated with the presence of different resistance distributions at LRS and HRS observed in both switching I-V curves. We propose a possible mechanism to explain the unique observed features by employing the role of the oxygen reservoir and conducting filament stability at interfaces of the two switching elements.
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