We have observed reversible light-induced mechanical switching for individual organic molecules bound to a metal surface. Scanning tunneling microscopy (STM) was used to image the features of individual azobenzene molecules on Au(111) before and after reversibly cycling their mechanical structure between trans and cis states using light. Azobenzene molecules were engineered to increase their surface photomechanical activity by attaching varying numbers of tert-butyl (TB) ligands ("legs") to the azobenzene phenyl rings. STM images show that increasing the number of TB legs "lifts" the azobenzene molecules from the substrate, thereby increasing molecular photomechanical activity by decreasing molecule-surface coupling.

We have investigated the effects of thermal annealing on ex-situ chemically vapor deposited submonolayer graphene islands on polycrystalline Cu foil at the atomic-scale using ultrahigh vacuum scanning tunneling microscopy. Low-temperature annealed graphene islands on Cu foil (at ∼430 °C) exhibit predominantly striped Moiré patterns, indicating a relatively weak interaction between graphene and the underlying polycrystalline Cu foil. Rapid high-temperature annealing of the sample (at 700-800 °C) gives rise to the removal of Cu oxide and the recovery of crystallographic features of the copper that surrounds the intact graphene. These experimental observations of continuous crystalline features between the underlying copper (beneath the graphene islands) and the surrounding exposed copper areas revealed by high-temperature annealing demonstrates the impenetrable nature of graphene and its potential application as a protective layer against corrosion.

We have investigated the initial stages of growth and the electronic structure of C(60) molecules on graphene grown epitaxially on SiC(0001) at the single-molecule level using cryogenic ultrahigh vacuum scanning tunneling microscopy and spectroscopy. We observe that the first layer of C(60) molecules self-assembles into a well-ordered, close-packed arrangement on graphene upon molecular deposition at room temperature while exhibiting a subtle C(60) superlattice. We measure a highest occupied molecular orbital-lowest unoccupied molecular orbital gap of ∼3.5 eV for the C(60) molecules on graphene in submonolayer regime, indicating a significantly smaller amount of charge transfer from the graphene to C(60) and substrate-induced screening as compared to C(60) adsorbed on metallic substrates. Our results have important implications for the use of graphene for future device applications that require electronic decoupling between functional molecular adsorbates and substrates.

Four-dimensional scanning ultrafast electron microscopy is used to investigate doping-and carrier-concentration-dependent ultrafast carrier dynamics of the in situ cleaved single-crystalline GaAs(110) substrates. We observed marked changes in the measured timeresolved secondary electrons depending on the induced alterations in the electronic structure. The enhancement of secondary electrons at positive times, when the electron pulse follows the optical pulse, is primarily due to an energy gain involving the photoexcited charge carriers that are transiently populated in the conduction band and further promoted by the electron pulse, consistent with a band structure that is dependent on chemical doping and carrier concentration. When electrons undergo sufficient energy loss on their journey to the surface, dark contrast becomes dominant in the image. At negative times, however, when the electron pulse precedes the optical pulse (electron impact), the dynamical behavior of carriers manifests itself in a dark contrast which indicates the suppression of secondary electrons upon the arrival of the optical pulse. In this case, the loss of energy of material's electrons is by collisions with the excited carriers. These results for carrier dynamics in GaAs(110) suggest strong carrier-carrier scatterings which are mirrored in the energy of material's secondary electrons during their migration to the surface. The approach presented here provides a fundamental understanding of materials probed by four-dimensional scanning ultrafast electron microscopy, and offers possibilities for use of this imaging technique in the study of ultrafast charge carrier dynamics in heterogeneously patterned micro-and nanostructured material surfaces and interfaces.scanning electron microscopy | ultrafast phenomena | charge dynamics imaging R ecent advances in four-dimensional (4D) ultrafast electron microscopy (UEM) have made it possible to investigate nonequilibrium electronic and structural dynamics with atomicscale spatial resolution and femtosecond temporal resolution (1). Unlike UEM, which operates in the transmission mode, scanning UEM techniques exploit the time evolution of secondary electrons (SEs) produced in the specimen, and provide additional marked advantages over the transmission mode. These include a relatively facile sample preparation requirement, an efficient heat dissipation, a lower radiation damage, and an accessibility to low-voltage environmental study (2, 3). Since its development this technique has been used to study carrier excitation dynamics in several prototypical semiconducting materials surfaces. In these studies, image contrast was monitored as a function of time, and it was found that Si exhibits a bright contrast in the image at positive times without appreciable dynamics at negative times, whereas CdSe displays bright contrast at positive times and dark contrast at negative times (2). However, the correlation between the measured time-dependent SE intensity and electronic structure of the material of interes...

We have used single-molecule-resolved scanning tunneling microscopy to measure the photomechanical switching rates of azobenzene-derived molecules at a gold surface during exposure to UV and visible light. This enables the direct determination of both the forward and reverse photoswitching cross sections for surface-mounted molecules at different wavelengths. In a dramatic departure from molecular behavior in solution-based environments, visible light does not efficiently reverse the reaction for azobenzene-derived molecules at a gold surface.

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Single-molecule-resolved scanning tunneling microscopy of tetra-tert-butyl azobenzene (TTB-AB) molecules adsorbed onto Au(111) reveals chirality selection rules in their photoswitching behavior. This observation is enabled by the fact that trans-TTB-AB molecules self-assemble into homochiral domains. Cis-TTB-AB molecules produced via photoisomerization are found in two distinct conformations with final state chirality determined by the initial trans isomer chirality. Based on these observations and ab initio calculations, we propose a new inversion-based dynamical photoswitching mechanism for azobenzene molecules at a surface.