The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of AlO thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and HO were used as the precursor and oxidant, respectively, with octadecylphosphonic acid (ODPA) as an SAM to block AlO film formation. However, AlO layers began to form on the ODPA SAMs after several cycles, despite reports that CH-terminated SAMs cannot react with TMA. We showed that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for AlO film growth. Moreover, the amount of physisorbed TMA was affected by the partial pressure. By controlling it, we developed a new AS-ALD AlO process with high selectivity, which produces films of ∼60 nm thickness over 370 cycles. The successful deposition of AlO thin film patterns using this process is a breakthrough technique in the field of nanotechnology.

QD-OLED device performance is unsatisfactory nowadays, due to the limited efficiency of blue OLED material as well as the low efficient converting rate of QD material. Here we proposed a novel structure of QD-OLED, using white OLED as the excitation. The device shows higher optical efficiency compared with QD-OLED with Blue OLED as excitation. In addition, a 6.6 inch green QD-OLED was demostrated with the proposed structure.

Abstract