The method to attach seed to crucible lid as well as seed quality is very important for obtaining high quality crystals. Therefore, modified seeding method was developed for improving adhesive layer between seed and graphite crucible lid. SiC single crystal grown with modified seeding method definitely exhibited lower micropipe density (MPD) and lower full width at half maximum (FWHM) values comparing with values from conventional seeding method. Etch pit density of SiC crystal was successfully decreased with using the modified seeding method.
The hot-zone design using an air-pocket was adopted to produce uniform temperature gradient in horizontal direction. In order to investigate the change of temperature gradient toward horizontal direction with growth time, the front shape of SiC growing crystal was measured with different growth stages such as initial, growing and finished stage. While SiC ingot grown in conventional hot-zone design exhibited inhomogeneous growth front in the initial stage of growth and multi facet formation in final stage, which could result in increased defect density, a homogeneous temperature gradient and improved crystal quality was obtained in the modified hot-zone design. Based on the mapping measurement of FWHM (Full width at half maximum) value in X-ray rocking curve, the crystal quality of SiC crystals grown with the modified hot-zone design was observed to be definitely better than conventional design.
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