A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures Broadband ultraviolet (UV) emission has been achieved from the GaN quantum dots grown on diff erent facets of hexagonal truncated pyramidal structures. The GaN-based structures include both semipolar and polar facets, on which the intrinsic piezoelectric fi elds and the growth rates are diff erent. In addition, a strain is locally suppressed at the boundaries of the truncated pyramid structure. As a result, the emission wavelength of quantum dots on various facets and boundaries becomes quite diff erent, rendering a solid-state broadband UV light source with homogenerous intensity in a wide wavelength range.Registered charity number: 207890 rsc.li/nanoscale-advances A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures † Group III-nitride semiconductor-based ultraviolet (UV) light emitting diodes have been suggested as a substitute for conventional arc-lamps such as mercury, xenon and deuterium arc-lamps, since they are compact, efficient and have a long lifetime. However, in previously reported studies, group III-nitride UV light emitting diodes did not show a broad UV spectrum range as conventional arc-lamps, which restricts their application in fields such as medical therapy and UV spectrophotometry. Here, we propose GaN quantum dots (QDs) grown on different facets of hexagonal truncated pyramid structures formed on a conventional (0001) sapphire substrate. A hexagonal truncated GaN pyramid structure includes {10 11} semipolar facets as well as a (0001) polar facet, which have intrinsically different piezoelectric fields and growth rates of GaN QDs. Consequently, we successfully demonstrated a plateau-like broadband UV spectrum ranging from $400 nm (UV-A) to $270 nm (UV-C) from the GaN QDs. In addition, at the top-edge of the truncated pyramid structure, a strain was locally suppressed compared to the center of the truncated pyramid structure. As a result, various emission wavelengths in the UV range were achieved from the GaN QDs grown on the sidewall, top-edge and top-center of hexagonal truncated pyramid structures, which ultimately provide a broadband UV spectrum with high efficiency.
Controlling the in-plane symmetry of wide-bandgap semiconductor quantum dots (QDs) is essential for room temperature quantum photonic applications using polarization entangled photon pairs. Herein, we report the formation of 3-fold symmetric group III-nitride QDs at the apex of a triangular pyramid via a self-limited growth mechanism. We employed the in-plane rotational symmetry of the c-plane of a Wurtzite crystal and the large built-in piezoelectric field to reduce fine-structure splitting. The QDs exhibit emission that is distinguishable from that of sidewall quantum wells, and the biexciton–exciton cascade possesses a single-photon nature. We observed the relatively low optical polarization anisotropy and small fine structure splitting under the measurement limit (270 μeV) with the 3-fold symmetric QD. In contrast with current strategies that consider group III-nitride QDs as strongly polarized single-photon emitters, our approach for controlling the QD symmetry provides a new perspective on such QDs, as polarization-entangled photon pairs.
Deterministic quantum dots (apex-QDs), which are spontaneously formed at the vertex of pyramid structures, are an attractive single-photon source. Herein, we propose the design of apex-QDs coupled to a single-mode optical fiber for directional emission from a quantum dot, followed by optimization of the structural parameters to maximize the extraction efficiency toward the fiber using FDTD simulation. A dielectric layer of SiO2 was inserted between a silver and a quantum dot to minimize the metallic loss and control the distance between them. For this, the optimum layer thicknesses of silver and SiO2 were 100 nm and 240 nm, respectively, achieving 94% light collection downward near 600 nm in wavelength. The proposed structure was then coupled to a tapered optical fiber, achieving 60% of the quantum dot emission. This high collection through an optical fiber was observed for a wide range of emission wavelengths.
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