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We present a high speed optical modulation using carrier depletion effect in an asymmetric silicon p-n diode resonator. To optimize coupling efficiency and reduce bending loss, two-step-etched waveguide is used in the racetrack resonator with a directional coupler. The quality factor of the resonator with a circumference of 260 um is 9,482, and the DC on/off ratio is 8 dB at -12V. The device shows the 3dB bandwidth of approximately8 GHz and the data transmission up to 12.5Gbit/s.

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Abstract. A 20-MHz switching high-speed light-modulating device for three-dimensional (3-D) image capturing and its system prototype are presented. For 3-D image capturing, the system utilizes a time-of-flight (TOF) principle by means of a 20-MHz high-speed micromachined electroabsorptive modulator, the so-called optical shutter. The high-speed modulation is obtained by utilizing the electro-absorption mechanism of the multilayer structure, which has an optical resonance cavity and lightabsorption epilayers grown by metal organic chemical vapor deposition process. The optical shutter device is specially designed to have small resistor-capacitor-time constant to get the high-speed modulation. The optical shutter is positioned in front of a standard high-resolution complementary metal oxide semiconductor image sensor. The optical shutter modulates the incoming infrared image to acquire the depth image. The suggested novel optical shutter device enables capturing of a full high resolution-depth image, which has been limited to video graphics array (VGA) by previous depth-capturing technologies. The suggested 3-D image sensing device can have a crucial impact on 3-D-related business such as 3-D cameras, gesture recognition, user interfaces, and 3-D displays. This paper presents micro-opto-electro-mechanical systemsbased optical shutter design, fabrication, characterization, 3-D camera system prototype, and image evaluation. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

Recently, silicon-waveguide-based hybrid modulators with high-performance electro-optic materials have been proposed to overcome the intrinsic limitations of silicon materials. Indium-tin-oxide (ITO) is one of the important candidates for such applications due to its unique features including the ENZ effect and electrically tunable permittivity. In this paper, we propose an ultra-compact integrated phase modulator which consists of a silicon slot waveguide with a thin ITO film in the slot region. In the near-infrared regime, bias-voltage-dependent free-carrier accumulation at the dielectric-ITO interface induces an epsilon-near-zero (ENZ) effect, and contributes to the strong phase modulation of the guided electromagnetic wave. With a voltage swing of 2 V, the device experiences a large variation of the effective modal index, resulting in a π radian phase shift within the device length of <5 μm at 210 THz according to our computer simulations. A high modulation efficiency of V(π)L(π)~0.0071 V·cm and a large device bandwidth of ~70 GHz suggest a potential for an ultra-compact optoelectronic component in the integrated silicon photonics platform.