Polymer semiconductors (PSCs) are an essential component of organic field‐effect transistors (OFETs), but their potential for stretchable electronics is limited by their brittleness and failure susceptibility upon strain. Herein, a covalent connection of two state‐of‐the‐art polymers—semiconducting poly‐diketo‐pyrrolopyrrole‐thienothiophene (PDPP‐TT) and elastomeric poly(dimethylsiloxane) (PDMS)—in a single triblock copolymer (TBC) chain is reported, which enables high charge carrier mobility and low modulus in one system. Three TBCs containing up to 65 wt% PDMS were obtained, and the TBC with 65 wt% PDMS content exhibits mobilities up to 0.1 cm2 V−1 s−1, in the range of the fully conjugated reference polymer PDPP‐TT (0.7 cm2 V−1 s−1). The TBC is ultrasoft with a low elastic modulus (5 MPa) in the range of mammalian tissue. The TBC exhibits an excellent stretchability and extraordinary durability, fully maintaining the initial electric conductivity in a doped state after 1500 cycles to 50% strain.
SynopsisThe dynamic mechanical behavior of 10 and 20% poly(viny1 methyl ether)-polystyrene blends has been studied in the frequency range Hz to 5 Hz and temperature range 100-450 K. Isochronal plots of modulus G' and loss factor, tan @, show the presence of one relaxation process at temperatures below the transition zone. A second relaxation process a t intermediate temperatures but below TR may be inferred from the breadth of the G" frequency curves in the transition zone of both blends. This process, a t 280 < T < 300 K, is independent of PVME concentration and seems to be associated with the local modes of motions of PS chains. The rheological behavior of the blends shows them to be compatible up to 20% PVME. Their C' and G" data cannot be shifted along a frequency axis to produce a satisfactory master curve. The departure from thermorheological simplicity is much more clearly observed in the tan Q than in the modulusfrequency plots. This departure is due to the change in the segmental correlation effects, or length, with temperature near T#. A molecular model of the growth of micrashear domains with hierarchically constrained molecular motions, given elsewhere, quantitatively agrees with the dynamic mechanical behavior. poly(2,6-dimethyl-l,4-phenylene oxide) (PPO) and PPO-PPS blends showed a similar behavior of the fl process in that the temperature of the P-relaxation peak remained nearly constant with increased concentration of PPO in the blend, and the dielectric measurements substantiated these results.The purpose of this study was to investigate whether the blend of PVME, which plasticizes PS, in contrast with PPO, which antiplasticizes PS, shows a
Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing thin-film transistors (TFTs) via a pure water-solution bladecoating process with focus on a low thermal budget. Low temperature and rapid annealing of triple-coated indium oxide thin-film transistors (3C-TFTs) and indium oxide/zinc oxide/indium oxide thin-film transistors (IZI-TFTs) on a 300 nm SiO 2 gate dielectric at 300 °C for only 60 s yields devices with an average field effect mobility of 10.7 and 13.8 cm 2 V −1 s −1 , respectively. The devices show an excellent on/off ratio (>10 6 ), and a threshold voltage close to 0 V when measured in air. Flexible MO-TFTs on polyimide substrates with AlO x dielectrics fabricated by rapid annealing treatment can achieve a remarkable mobility of over 10 cm 2 V −1 s −1 at low operating voltage. When using a longer post-coating annealing period of 20 min, high-performance 3C-TFTs (over 18 cm 2 V −1 s −1 ) and IZI-TFTs (over 38 cm 2 V −1 s −1 ) using MO semiconductor layers annealed at 300 °C are achieved.
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