Zn2SbN3 is the first Sb-based crystalline nitride and a photoactive semiconductor.
The spontaneous etching of boron oxide (B 2 O 3 ) by hydrogen fluoride (HF) gas is important during thermal atomic layer etching after BCl 3 converts the surface of various metal oxides to a B 2 O 3 layer. In this study, the chemical vapor etching (CVE) of B 2 O 3 by HF was experimentally monitored using Fourier transform infrared (FTIR) spectroscopy and quadrupole mass spectrometry (QMS). The spontaneous etching of B 2 O 3 by HF gas was also analyzed using density functional theory (DFT). B 2 O 3 films were grown using B 2 O 3 atomic layer deposition with BCl 3 and H 2 O as the reactants at 40 °C. FTIR spectroscopy then observed the CVE of B 2 O 3 by HF at 150 °C. B 2 O 3 etching was monitored by the loss of absorbance for B-O stretching vibration in B 2 O 3 films. FTIR spectroscopy studies also observed B-F stretching vibrations from BF x species on the B 2 O 3 surface after HF exposures. In addition, the QMS analysis was able to identify the etch products during the spontaneous etching of B 2 O 3 by HF gas at 150 °C. The QMS studies observed the main volatile etch products as BF 3 , BF 2 (OH), and H 2 O. Additional volatile etch products were also detected including B 3 O 3 F 3 and other boroxine ring compounds. The DFT predictions were consistent with the spontaneous etching of B 2 O 3 by HF gas. DFT confirmed that CVE was likely because the energetics of the spontaneous etching reaction B 2 O 3 (s) + 6HF(g) → 2BF 3 (g) + 3H 2 O(g) were more favorable than the self-limiting reaction B 2 O 3 (s) + 6HF(g) → 2BF 3 (s) + 3H 2 O(g). The spontaneous etching of B 2 O 3 was predicted at temperatures above −163 °C for an HF reactant pressure of 0.2 Torr and BF 3 and H 2 O product pressure of 0.01 Torr.
A combined computational and experimental study is employed to understand the competition between self-limiting (SL) and chemical vapor etch (CVE) reactions to design an atomic layer etch (ALE) process. The pulses in an ALE process have to be self-limiting; i.e., the reactions should reach saturation after sufficient pulse time. By comparing the reaction free energies of corresponding SL and CVE reactions using density functional theory (DFT), the temperature and pressure conditions can be predicted that favor the SL or CVE reactions. The etching of TiO2 when exposed to HF gas is utilized as a test case. Simulations reveal that when TiO2 is exposed to reactant HF at a pressure of 0.2 Torr, the SL reaction removing H2O at 0.01 Torr and fluorinating the surface is preferred up to 87 °C (360 K). At higher temperatures, continuous removal of TiO2 by CVE occurs according to the reaction TiO2 + HF → TiF4 + H2O subject to kinetic activation barriers. Experimental results from in situ Fourier transform infrared (FTIR) spectroscopy and quadrupole mass spectrometry (QMS) are compared with the theoretical predictions. In good agreement with theory, the FTIR spectroscopy studies revealed an onset of spontaneous etching (CVE) at temperatures around 80–90 °C. In addition, the QMS analysis observed TiF4 and H2O as the etch products, further validating the calculations. The calculations also predicted that an increase in the reactant gas pressure would enhance etching at high temperatures. The low computational cost of this theoretical approach allows for rapid screening of etch reagents and prediction of the temperature/pressure windows where the reactions will be in the SL or CVE regimes.
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