Recently proposed quantum-chaotic sensors achieve quantum enhancements in measurement precision by applying nonlinear control pulses to the dynamics of the quantum sensor while using classical initial states that are easy to prepare. Here, we use the cross-entropy method of reinforcement learning (RL) to optimize the strength and position of control pulses. Compared to the quantumchaotic sensors with periodic control pulses in the presence of superradiant damping, we find that decoherence can be fought even better and measurement precision can be enhanced further by optimizing the control. In some examples, we find enhancements in sensitivity by more than an order of magnitude. By visualizing the evolution of the quantum state, the mechanism exploited by the RL method is identified as a kind of spin-squeezing strategy that is adapted to the superradiant damping.

No abstract

Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We present a machine learning algorithm capable of automatically identifying PSB using charge transport measurements. The scarcity of PSB data is circumvented by training the algorithm with simulated data and by using cross-device validation. We demonstrate our approach on a silicon field-effect transistor device and report an accuracy of 96% on different test devices, giving evidence that the approach is robust to device variability. The approach is expected to be employable across all types of quantum dot devices.

Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We present a machine learning algorithm capable of automatically identifying PSB using charge transport measurements. The scarcity of PSB data is circumvented by training the algorithm with simulated data and by using cross-device validation. We demonstrate our approach on a silicon field-effect transistor device and report an accuracy of 96% on different test devices, giving evidence that the approach is robust to device variability. The approach is expected to be employable across all types of quantum dot devices.