We report on the experimental observation of nonlocal spin-dependent thermoelectric effects in superconductor-ferromagnet multiterminal structures. Our samples consist of a thin superconducting aluminum wire with several ferromagnetic tunnel junctions attached to it. When a thermal excitation is applied to one of the junctions in the presence of a Zeeman splitting of the density of states of the superconductor, a thermoelectric current is observed in remote junctions at distances exceeding 10 µm. The results can be explained by recent theories of coupled spin and heat transport in high-field superconductors.

Quantum cascade detectors (QCD) are photovoltaic mid-infrared detectors based on intersubband transitions. Owing to the sub-picosecond carrier transport between subbands and the absence of a bias voltage, QCDs are ideally suited for high-speed and room temperature operation. Here, we demonstrate the design, fabrication, and characterization of 4.3 µm wavelength QCDs optimized for large electrical bandwidth. The detector signal is extracted via a tapered coplanar waveguide (CPW), which was impedance-matched to 50 Ω. Using femtosecond pulses generated by a mid-infrared optical parametric oscillator (OPO), we show that the impulse response of the fully packaged QCDs has a full-width at half-maximum of only 13.4 ps corresponding to a 3-dB bandwidth of more than 20 GHz. Considerable detection capability beyond the 3-dB bandwidth is reported up to at least 50 GHz, which allows us to measure more than 600 harmonics of the OPO repetition frequency reaching 38 dB signal-to-noise ratio without the need of electronic amplification.

Semiconductor saturable absorber mirrors (SESAMs) are widely used for modelocking of various ultrafast lasers. The growing interest for SESAM-modelocked lasers in the short-wave infrared and mid-infrared regime requires precise characterization of SESAM parameters. Here, we present two SESAM characterization setups for a wavelength range of 1.9 to 3 µm to precisely measure both nonlinear reflectivity and time-resolved recovery dynamics. For the nonlinear reflectivity measurement, a high accuracy (<0.04%) over a wide fluence range (0.1–1500 µJ/cm2) is achieved. Time-resolved pump-probe measurements have a resolution of about 100 fs and a scan range of up to 680 ps. Using the two setups, we have fully characterized three different GaSb-SESAMs at an operation wavelength of 2.05 µm fabricated in the FIRST lab at ETH Zurich. The results show excellent performance suitable for modelocking diode-pumped solid-state and semiconductor disk lasers. We have measured saturation fluences of around 4 µJ/cm2, modulation depths varying from 1% to 2.4%, low non-saturable losses (∼ 0.2%) and sufficiently fast recovery times (< 32 ps). The predicted influence of Auger recombination in the GaSb material system is also investigated.

We present the detailed growth and characterization of novel GaSb-based semiconductor saturable absorber mirrors (SESAMs) operating in the 2–2.4 µm spectral range. These SESAMs at different wavelengths are bandgap engineered using ternary material compositions and without strain compensation. We observe that even when the thickness of quantum wells (QWs) exceeds the critical thickness we obtain strain relaxed SESAMs that do not substantially increase nonsaturable losses. SESAMs have been fabricated using molecular beam epitaxy with a AlAs0.08Sb0.92/GaSb distributed Bragg reflector (DBR) and strained type-I InxGa1-xSb or type-II W-like AlSb/InAs/GaSb QWs in the absorber region. All the type-I SESAMs show excellent performance, which is suitable for modelocking of diode-pumped semiconductor, ion-doped solid-state, and thin-disk lasers. The recovery time of the type-II SESAM is too long which can be interesting for laser applications. The dependence of the SESAM design, based on its QW number, barrier material, and operation wavelength are investigated. A detailed characterization is conducted to draw conclusions from macroscopic nonlinear and transient absorption properties at different wavelengths in the 2–2.4 µm range for the corresponding devices.

Femtosecond lasers with high peak power at wavelengths above 2 µm are of high interest for generating mid-infrared (mid-IR) broadband coherent light for spectroscopic applications. Cr2+-doped ZnS/ZnSe solid-state lasers are uniquely suited since they provide an ultra-broad bandwidth in combination with watt-level average power. To date, the semiconductor saturable absorber mirror (SESAM) mode-locked Cr:ZnS(e) lasers have been severely limited in power due to the lack of suitable 2.4-µm SESAMs. For the first time, we develop novel high-performance 2.4-µm type-I and type-II SESAMs, and thereby obtain state-of-the-art mode-locking performance. The type-I InGaSb/GaSb SESAM demonstrates a low non-saturable loss (0.8%) and an ultrafast recovery time (1.9 ps). By incorporating this SESAM in a 250-MHz Cr:ZnS laser cavity, we demonstrate fundamental mode-locking at 2.37 µm with 0.8 W average power and 79-fs pulse duration. This corresponds to a peak power of 39 kW, which is the highest so far for any saturable absorber mode-locked Cr:ZnS(e) oscillator. In the same laser cavity, we could also generate 120-fs pulses at a record high average power of 1 W. A comparable laser performance is achieved using type-II InAs/GaSb SESAM as well. These results pave the way towards a new class of high-power femtosecond SESAM mode-locked oscillators operating directly above 2-µm wavelength.