Proton-conducting materials play a central role in many renewable energy and bioelectronics technologies, including fuel cells, batteries and sensors. Thus, much research effort has been expended to develop improved proton-conducting materials, such as ceramic oxides, solid acids, polymers and metal-organic frameworks. Within this context, bulk proton conductors from naturally occurring proteins have received somewhat less attention than other materials, which is surprising given the potential modularity, tunability and processability of protein-based materials. Here, we report proton conductivity for thin films composed of reflectin, a cephalopod structural protein. Bulk reflectin has a proton conductivity of ~2.6 × 10(-3) S cm(-1) at 65 °C, a proton transport activation energy of ~0.2 eV and a proton mobility of ~7 × 10(-3) cm(2) V(-1) s(-1). These figures of merit are similar to those reported for state-of-the-art artificial proton conductors and make it possible to use reflectin in protein-based protonic transistors. Our findings may hold implications for the next generation of biocompatible proton-conducting materials and protonic devices.

In nature, cephalopods employ unique dynamic camouflage mechanisms. Herein, we draw inspiration from self‐assembled structures found in cephalopods to fabricate tunable biomimetic camouflage coatings. The reflectance of these coatings is dynamically modulated between the visible and infrared regions of the electromagnetic spectrum in situ. Our studies represent a crucial step towards reconfigurable and disposable infrared camouflage for stealth applications.

Ionic transistors from organic and biological materials hold great promise for bioelectronics applications. Thus, much research effort has focused on optimizing the performance of these devices. Herein, we experimentally validate a straightforward strategy for enhancing the high to low current ratios of protein-based protonic transistors. Upon reducing the thickness of the transistors’ active layers, we increase their high to low current ratios 2-fold while leaving the other figures of merit unchanged. The measured ratio of 3.3 is comparable to the best values found for analogous devices. These findings underscore the importance of the active layer geometry for optimum protonic transistor functionality.