A detailed study of the influence of the pulse duration, from the femtosecond to the nanosecond regime, on the evolution of the hole shape and depth during percussion drilling in silicon is presented. Real-time backlight imaging of the hole development is obtained for holes up to 2 mm deep with aspect ratios extending to 25:1. For low pulse energies, the hole-shape and drilling characteristics are similar for femtosecond, picoseconds and nanosecond regimes. At higher pulse energies, ns-pulses exhibit slower average drilling rates but eventually reach greater final depths. The shape of these holes is however dominated by branching and large internal cavities. For ps-pulses, a cylindrical shape is maintained with frequent small bulges on the side-walls. In contrast, fs-pulses cause only a limited number of imperfections on a tapered hole shape.
There is increasing interest in extreme-ultraviolet (EUV) laser-based lamps for sub-10-nm lithography operating in the region of 6.6 nm. A collisional-radiative model is developed as a post-processor of a hydrodynamic code to investigate emission from resonance lines in Kr, Gd, and Tb ions under conditions typical for mass-limited EUV sources. The analysis reveals that maximum conversion efficiencies of Kr occur at 5×1010W/cm2, while for Gd and Tb it was ≃0.9%/2πsr for laser intensities of (2−5)×1012W/cm2.
Out-of-band long wavelength emission measurements from high power, high-repetition-rate extreme-ultra-violet lithography (EUVL) laser plasma sources are imperative to estimating heat deposition in EUV mirrors, and the impact of short wavelength light transported through the imaging system to the wafer surface. This paper reports a series of experiments conducted to measure the absolute spectral irradiances of laser-plasmas produced from planar tin targets over the wavelength region of 124 to 164 nm by 1.06 μm wavelength, 10 ns full-width-at-half-maximum Gaussian laser pulses. The use of spherical targets is relevant to the EUVL source scenario. Although plasmas produced from planar surfaces evolve differently, there is a close similarity to the evolution of current from 10.6 μm CO2 laser EUVL sources, which use a pre-pulse from a lower energy solid-state laser to melt and reform an initial spherical droplet into a thin planar disc target. The maximum of radiation conversion efficiency in the 124–164 nm wavelength band (1%/2πsr) occurs at the laser intensity of 1010 W cm−2. A developed collisional-radiative model reveals the strong experimental spectra that originate mainly from the 4d105p2-4d105s5p, 4d105p-4d105s resonance lines, and 4d95p-4d95s unresolved transition arrays from Sn III, Sn IV, and Sn V ions, respectively. The calculated conversion efficiencies using a 2D radiation-hydrodynamics model are in agreement with the measurements. The model predicts the out-of-band (100–400 nm) radiation conversion efficiencies generated by both 1.06 and 10.6 μm pulses. The 10.6 μm laser pulse produces a higher conversion efficiency (12%/2πsr) at the lower laser intensity of 109 W cm−2.
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