The problem is governed by a Jones integral equation and the solution is shown to depend upon a single function which occurs naturally after a contour deformation has produced extensive cancellation in the work. The far-scattered field off the axis of symmetry is found in detail, yielding terms which are believed to be new.
Initially a general incident field is considered and the equations are split into Fourier components. Each Fourier component gives rise to an integral equation similar to that obtained when investigating diffraction of a normally incident plane wave. After the oblique wave has been specified an analysis similar to that used for the normal wave leads to a solution of the problem containing an infinite number of constants. It is shown, however, that these constants do not affect the leading terms of the high frequency scattering coefficient.
Reactive strippers are now widely used in semiconductor manufacture for the removal of photoresists. This paper describes the use of track development monitoring and a Fabry-Perot interferometric method to quantitatively assess the removal of hardbaked and plasma-treated photoresist from silicon substrates. The Fabry-Perot interferometric system allows visualization of the processes which occur when the strippers are placed in contact with resist. It is evident that these stri pers do not simply dissolve the photoresist but promote removal through the generation of crazing and disruption orthe resist polymer by the production of minute bubbles at the silicon oxide-resist interface or within the bulk resist.
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