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Interactions between radical growth precursors on plasma-deposited silicon thin-film surfaces Dependence of thinfilm microstructure on deposition rate by means of a computer simulationStep coverage in the vacuum deposition of thin metal films

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Techniques for forming dielectric layers for fabricating semiconductor components are reviewed, including (1) low-pressure techniques: evaporation, sputtering, plasma deposition, and low-pressure CVD, (2) techniques operating at one atmosphere total pressure: thermal oxidation, chemical vapor deposition, anodization, electrophoresis, spin on, spray on, silk screening, and (3) a number of miscellaneous techniques: roller coating, offset printing, centrifugation–sedimentation, and transfer. The advantages and limitations of the methods are presented and typical applications are given. Novel applications of the technology to other-than-silicon semiconductor devices are outlined, and future trends in the technology are indicated.

A system is described in which plasma/surface treatments can be performed and the substrates can be analyzed by x-ray photoelectron spectroscopy by transferring them via a load lock into the analytic chamber. Also described are some plasma etching experiments that demonstrate the utility of this apparatus. The system emulates larger systems in which plasma treatments are performed at pressures, voltages, and power densities similar to those employed in large commercial systems.

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