We report a promising simple strategy for improving the performance of the photoanode for photoelectrochemical (PEC) water splitting. ZnO nanorods on an indium tin oxide glass substrate were synthesized by a hydrothermal method following calcinations in air at 500 °C for 2 h and pure ambient hydrogen at atmospheric pressure at 400 °C for 30 min. The hydrogenated ZnO (H:ZnO) sample shows an enhanced photocurrent in comparison to that of ZnO nanorods. To enhance the absorption in the visible light and near-infrared regions, H:ZnO nanorods were sensitized by cadmium sulfide (CdS) nanoparticles and carbon quantum dots (CQDs). The H:ZnO nanorod film sensitized in this way exhibited significantly improved PEC properties after treatment with ambient nitrogen at 400 °C for 30 min. The optimized H:ZnO nanorod sample sensitized by CdS and CQDs yields a photocurrent density of ∼12.82 mA/cm 2 at 0 V (vs saturated calomel electrode (SCE)) in 0.25 M Na 2 S and 0.35 M Na 2 SO 3 solution under the illumination of simulated solar light (100 mW/cm 2 from a 150 W xenon Arc lamp source). The optimal structure shows a solarto-hydrogen conversion efficiency of ∼3.85% (at −0.67 V vs SCE). The H 2 gas generation obtained using this optimal structure consisting of H:ZnO nanorods sensitized by CdS and CQDs was 7.04 mL/cm 2 in 1 h. The morphology and properties of the samples were examined by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, ultraviolet−visible absorption, and electrical measurements.
[reaction: see text] The amine-mediated photoreduction of benzophenones in room temperature ionic liquids was investigated. Unlike the analogous reaction in organic solvents, the photoreduction produces mainly the corresponding benzhydrol in most cases. Because the reaction consumes only 1 equiv of amine and the solvent can be easily recycled, the photoreduction allows a very clean method for the conversion of benzophenones to benzhydrols.
Computer simulation of plasma etched two-dimensional profi explored. The model divides the process into three rate compor isotropic or chemically reactive etching, anisotropic or direcl etching, and orientationally dependent ion beam etching. The t extends the user-oriented computer program for Simulation And F of Profiles in Lithography and Etching (SAMPLE) which simulate: time evolution of line-edge profiles by advancing nodes on a : Applications here include residue left at a step using anisotrc and undercut produced using arsenic implanted poly-silicon layc The reported research completed the author's Master of Sc' requirements for the University of California at Berkeley, Dect Although it is not an official copy, this has been reproduced t UNIX work processor TROFF. es is mts: onal gori thm idel 1 ing the :ring . Iic etching ' S . mce Degree iber 1979. ;ing the I. Introduction.As device sizes shrink etched profiles and shapes become increasingly important tion. Dry etching techniques are particularly popular in producing small di achieve VLSI technologies. They range from chemical, isotropic processes, using re1 reactors, to directional, physical processes, in diode or sputter etching systems. affords anisotropy in etching for optimal profile control and pattern transfer. By a within the range, computer simulation of the time evolution of line edge profi cially useful tool in exploring and understanding various degrees of anisotro processes.
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