Articles you may be interested inNumerical simulation of organic semiconductor devices with high carrier densities

Current conduction mechanisms in atomic-layer-deposited HfO 2 / nitrided SiO 2 stacked gate on 4H silicon carbide Thin Al 2 O 3 layers of 2-135 nm thickness deposited by thermal atomic layer deposition at 80 C were characterized regarding the current limiting mechanisms by increasing voltage ramp stress. By analyzing the j(U)-characteristics regarding ohmic injection, space charge limited current (SCLC), Schottky-emission, Fowler-Nordheim-tunneling, and Poole-Frenkel-emission, the limiting mechanisms were identified. This was performed by rearranging and plotting the data in a linear scale, such as Schottky-plot, Poole-Frenkel-plot, and Fowler-Nordheim-plot. Linear regression then was applied to the data to extract the values of relative permittivity from Schottky-plot slope and Poole-Frenkel-plot slope. From Fowler-Nordheim-plot slope, the Fowler-Nordheim-energy-barrier was extracted. Example measurements in addition to a statistical overview of the results of all investigated samples are provided. Linear regression was applied to the region of the data that matches the realistic values most. It is concluded that ohmic injection and therefore SCLC only occurs at thicknesses below 12 nm and that the Poole-Frenkel-effect is no significant current limiting process. The extracted Fowler-Nordheim-barriers vary in the range of up to approximately 4 eV but do not show a specific trend. It is discussed whether the negative slope in the Fowler-Nordheim-plot could in some cases be a misinterpreted trap filled limit in the case of space charge limited current. V C 2013 AIP Publishing LLC. [http://dx.

Articles you may be interested inLow-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si Atomic layer deposition of Al2O3 and AlxTi1−xOy thin films on N2O plasma pretreated carbon materials J. Vac. Sci. Technol. A 31, 01A135 (2013); 10.1116/1.4769793 Degradation analysis and characterization of multifilamentary conduction patterns in high-field stressed atomiclayer-deposited TiO2/Al2O3 nanolaminates on GaAs J. Appl. Phys. 112, 064113 (2012); 10.1063/1.4754510 Plasma-assisted atomic layer deposition of TiN / Al 2 O 3 stacks for metal-oxide-semiconductor capacitor applications

No abstract

No abstract

We report on the continuous increase of the breakdown electric field, also known as disruptive strength, of an ultra thin layer based on Al 2 O 3 prepared by atomic layer deposition (ALD) by reducing its thickness from 90 nm down to 3 nm. By calculating the disruptive strength for lower thicknesses, we demonstrate that our observations are in agreement with recent reports. Additionally, the disruptive strength increases to lower thicknesses as the pinhole density rises. The pinholes, referred to as morphological defects, are detected by Cu electroplating and result in a lower permittivity of the dielectric. As a conclusion, the dielectric breakdown is predominantly attributed to intrinsic, meaning stoichiometric defects. Thus, morphological defects, consisting of pinholes generated by agglomerative growth of the dielectric, surprisingly do not have a negative influence on the dielectric breakdown of ALDprocessed ultra thin dielectric layers.