Analyzes generates by Scanning Electronic Microscopy (SEM/BSE), Fourier Transform Infrared Spectroscopy (FTIR) and X-Ray Diffraction (XRD) were used in order to compare epitaxial layers of PbSnTe, grown high quality crystalline by Hot Wall Beam Epitaxy -HWBE technique, directly over single crystal BaF2 wafers, p type. The PbSnTe/BaF2 heterostructures were analyzed electrically by Hall Effect (HE), in electrical contacts in the PbSnTe layers (Van der Pauw method), and optoeletronic by Detectivity (D), are used as thermal infrared detectors that work with the wavelength -3 |im < X < 14 |im at 77 K temperature.
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