The morphology of the source area of the Canary Debris Flow has been mapped using both GLORIA reconnaissance and TOBI high-resolution sidescan sonar systems. West of »19°W, the sea¯oor is characterized by a strongly lineated downslope-trending fabric. This fabric can be interpreted as being caused by streams of debris separated by longitudinal shears. Multiple¯ow pulses are indicated by a series of asymmetrical lateral ridges which mark the northern boundary of the¯ow. East of »19°W, GLORIA data show only a weak fabric of irregular patches and alongslope lineaments. The TOBI data show the patches to be coherent sediment blocks up to 10 km across, surrounded by debris¯ow material. These are interpreted as in situ areas of sea¯oor sediment which have survived the slope failure and debris¯ow event rather than transported fragments of a failed sediment slab. TOBI data from the best developed area of alongslope lineaments show a series of small faults downstepping to the west. This area of sea¯oor is interpreted as one of partial sediment failure, where the failure process became`frozen' before total mobilization of the sea¯oor sediments could occur. The overall morphology of the failure area indicates removal of a slab-like body of sediment, although we cannot distinguish between retrogressive and slab-slide failure mechanisms. If the latter mechanism is applicable, fragmentation of the failing slab' must have commenced concurrently with the onset of downslope transport. Immediately upslope from the debris¯ow source area, a sea¯oor of characteristic rough blocky texture is interpreted as the surface of a debris avalanche derived from the slopes of the island of El Hierro. The debris¯ow and avalanche appear to be simultaneous events, with failure of the slope sediments occurring while the avalanche deposits were still mobile enough to ®ll and disguise the topographic expression of the debris¯ow headwall. Loading of the slope sediments by the debris avalanche most probably triggered the Canary Debris Flow.
The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.
In lensless microscopy, spatial resolution is usually provided by the pixel density of current digital cameras, which are reaching a hard-to-surpass pixel size / resolution limit over 1 µm. As an alternative, the dependence of the resolving power can be moved from the detector to the light sources, offering a new kind of lensless microscopy setups. The use of continuously scaled-down Light-Emitting Diode (LED) arrays to scan the sample allows resolutions on order of the LED size, giving rise to compact and low-cost microscopes without mechanical scanners or optical accessories. In this paper, we present the operation principle of this new approach to lensless microscopy, with simulations that demonstrate the possibility to use it for super-resolution, as well as a first prototype. This proof-of-concept setup integrates an 8 × 8 array of LEDs, each 5 × 5 μm2 pixel size and 10 μm pitch, and an optical detector. We characterize the system using Electron-Beam Lithography (EBL) pattern. Our prototype validates the imaging principle and opens the way to improve resolution by further miniaturizing the light sources.
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