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This study aimed to evaluate the effects of dietary fiber from Chinese cabbage outer‐leaf powder, which is a main by‐product of kimchi, on the quality, texture properties, and sensory evaluation of muffins. The kimchi by‐product powder (KBP, 36.2% dietary fiber) was added at 1%–4% dietary fiber content, by replacing wheat flour (w/w basis). The physico‐chemical and sensory properties of the baked muffins were measured. The height and volume of the muffins decreased with the addition of KBP. Increasing the KBP content resulted in increased hardness and reduced chewiness. No significant difference was observed in the overall acceptance among the muffins, up to the 2% added dietary fiber group, and the positive effect of the incorporated KBP was also confirmed in the sensory evaluation. These results indicate that it is possible to produce functional muffins with increased dietary fiber content by adding KBP in place of flour.

We have fabricated a single-wall carbon-nanotube (CNT)-based nonvolatile memory device using SiO2–Si3N4–SiO2 (ONO) layers as a storage node. The memory device is composed of a top gate structure with a channel width of a few nanometers and the ONO layer embedded between CNT and gate electrode. When the bias voltage between the CNT and gate electrode increases to 4 V, charges are tunneled out from CNT surfaces and captured to the traps in the ONO layers. Stored charges on the trap sites make the threshold voltage shift of 60 mV and is independent of charging time, suggesting that the ONO has traps with a quasiquantized energy state. The quantized state is related to the localized high electric field associated with CNT channel. The CNT-field-effect transistor with an ONO storage node could be used for an ultrahigh-density nonvolatile memory.

A type of carbon nanotube transistors, which would be suitable for large-scale integration, has been fabricated from vertically aligned carbon nanotubes. We fabricated highly ordered carbon nanotubes, which are selectively grown on the patterned aluminum oxide nanotemplates. Each device element is formed on a vertical carbon nanotube attached to a bottom (source) and upper (drain) electrodes and a gate electrode, which is electrostatically switchable. The transistors can be integrated in large arrays with the potential for tera-level density (2×1011/cm2). The vertical carbon nanotube transistor shows ON/OFF switching operation at 30 K.

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