Here we have demonstrated the special technique so called gas-timing (GT) rf magnetron sputtering which allow us to control a texture orientation of Ag thin films without applying any additional energy sources.
Synchrotron x-ray absorption near edge structures (XANES) measurements of In L3 edge is used in conjunction with first principles calculations to characterize rf magnetron sputtered indium oxynitride at different O contents. Good agreement between the measured and the independently calculated spectra are obtained. Calculations show that the XANES spectra of this alloy are sensitive to the coordination numbers of the In atoms, i.e., fourfold for indium nitride-like structures and sixfold for indium oxide-like structures, but not to the substitution of nearest neighbor N by O or vice versa.
Herein, we demonstrate a powerful technique, known as reactive gas-timing (RGT) rf magnetron sputtering, to fabricate high quality Zn3N2 thin films at room temperature without applying any additional energy sources.
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