Herein we present a theoretical foray on crucial role played by the graphitic tunnelling barrier in tuning spintronic feature of two-dimensional insulating graphene layer sandwiched between two ferromagnetic graphitic carbon nitride (g- C4N3) electrodes. We mainly focused on the tuning of spin filter efficiency due to the alteration in tunnelling width. 100% spin filter efficiency reported at each tunnelling width. High degree of spin filter efficiency is restored even at finite bias over a wide range of bias range -1.0 V to +1.0 V. Entire observation have been explained by analysing transmission spectrum at zero bias and a molecular level origin of the observed spintronic response of the device have been provided by analysing the Molecular Projected Self-Consistent Hamiltonian states (MPSH) and transmission pathways of the system.
In the present work, we report giant negative differential resistance action in probably the simplest molecular nanoelectronic device comprising of carbon chain placed between two ferromagnetic electrodes named as graphitic carbon nitride (g-C4N3). The negative differential resistance action is spin polarized and only evident at spin down channel. Spin polarized quantum transport studies using Keldysh non-equilibrium Green's function based density functional theory reports very high negative differential resistance over the bias range of ±0.1 V to ±0.3 V. This symmetric negative differential resistancec feature has been explained by an analysis of transmission spectrum across the Fermi energy level and Molecular Projected Self-Consistent Hamiltonian states (MPSH) of the system. Role of in-phase and out of phase electron waves in ensuring negative differential resistance feature has been justified through transmission pathways of the system. The simplicity of the molecular system added with robust spin polarized negative differential action added with experimental relevance certainly establishes the uniqueness of the device in respect of modern spintronic research.
We report herein, charge transfer assisted tuning of electronic and spintronic feature of g-C4N3@Lin=1-4 systems. Complete removal of spintronic feature is observed at the doping concentration 14.28%. At lower doping concentration, half metallic feature is observed with clear manifestation of negative differential resistance, which is predominant at n=3. We also noticed significant modifications in current-voltage characteristics as the number of dopants flips from odd to even numbers. Observed feature is mainly attributed to increased charge transfer from Li atom to the g-C4N3 backbone at higher doping concentration and concomitant enhancement in electron-electron interactions. These observations are in corroboration with molecular orbital picture obtained at various doping concentrations.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.