Articles you may be interested inDynamic bias temperature instability-like behaviors under Fowler-Nordheim program/erase stress in nanoscale silicon-oxide-nitride-oxide-silicon memories Appl. Phys. Lett. 92, 133508 (2008); 10.1063/1.2905272 Conduction mechanisms and reliability of thermal Ta 2 O 5 -Si structures and the effect of the gate electrode
Transition state structures for the reaction of allyltetrafluorosilicate with formaldehyde as well as structures of the silicate and related compounds were located with ab initio MO calculations. The origin of the unique reactivity of pentacoordinate allylsilicates observed experimentally is discussed on this basis.
We used a density functional method to investigate the mechanism of negative-bias temperature instability (NBTI) and resultant structural changes of Si/SiO2 and Si/SiOxNy interfaces. The reaction energies for the water- and hydrogen-originated instabilities of several interface defects show that water-originated reactions of oxygen and nitrogen vacancies occur most easily. The larger instability of the Si/SiOxNy interface, compared with the Si/SiO2 interface, can be understood in terms of the difference in reaction energies. According to the calculated nitrogen 1s core-level shifts of the nitrogen atoms at the Si/SiOxNy interface, it is possible to identify a NBTI-generated structure at the Si/SiOxNy interface by x-ray photoelectron spectroscopy.
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