This paper presents the circuit model that is used for the cross-coupled charge pump design algorithm. Symbolic description of the pump stage model as an analog functional block for high-voltage application is firstly discussed. Design process has been done by using simplified BSIM model equations assuming the long channel MOSFET. Characteristics have been verified by ELDO Spice and compared with the found relationships. Static and dynamic parameters of the subcircuit have been tested in two-stages structure by LT Spice simulator. Analysis results show the consistency between model and real circuits characteristics under given conditions. Complex model provides the reliable results for significantly smaller strange capacitances in comparision with the main pump capacitances. The model can be used for design and prediction of the pump parameters without long-time simulation process. The strong inversion region of MOSFET is expected, thus equations are correct for other MOSFET models that are used in chip design (PSP).
Ahstract-This paper presents some real properties of the cross-coupled charge pump that is used in low power microelectronic integrated systems operating with high voltage (FLASH, EEPROM memories). SC-circuits characterization and design aspects are firstly discussed. Theoretical analysis of the cross-coupled charge pump with accompanying equations has been done. Some real properties have been simulated by ELDO Spice and compared with these assumptions. Simulation results show discrepancy between calculation and simulated pa rameters due to significant pumping losses that have been discussed in detail. Discontinuity of the output voltage through input parameters is very important finding that complicates the development of the real model for design purposes.
This paper focuses on the practical aspects of the realisation of Dickson and Fibonacci charge pumps. Standard Dickson charge pump circuit solution and new Fibonacci charge pump implementation are compared. Both charge pumps were designed and then evaluated by LTspice XVII simulations and realised in a discrete form on printed circuit board (PCB). Finally, the key parameters as the output voltage, efficiency, rise time, variable power supply and clock frequency effects were measured.
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