Amorphous In-Ga-Zn-O thin-film transistors on flexible substrates were prepared to investigate H2O adsorption under negative bias stress (NBS). Shorter channel lengths induce a more seriously deteriorated NBS stability due to the stronger electric field near the source or drain electrode. With increasing channel width, the NBS instability increases to a peak and then slightly decreases. Integrated Systems Engineering Technology Computer-aided Design (ISE-TCAD) simulation confirms that the electric field near the source/drain in the etch-stop layer is relatively dense, especially near the channel edges. The electric field direction is also confirmed to have significant effects on the H2O adsorption process.

Gallium-tin oxide (GTO) semiconductor thin films were prepared by spin-coating with 2-methoxyethanol as the solvent. Their crystal structures, optical transparency, chemical states and surface morphologies, along with the electrical properties, were dependent on Ga contents and annealing temperatures. The optimized GTO channel layer was applied in the high-k Al 2 O 3 thin film transistor (TFT) with a low operation voltage of 2 V, a maximum field-effect mobility of 69 cm 2 V −1 s −1 , a subthreshold swing (SS) of 76 mV dec −1 , a threshold voltage of 0.67 V and an on-off current ratio of 1.8×10 7. The solution-processed amorphous-GTO-TFTs would promote the development of low-consumption, low-cost and high performance In-free TFT devices.

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