The spectral nonlinear phase method and the Fourier amplitude method have been applied to measure the thin-film thickness profile in vertical scanning white-light interferometry (VSWLI). However, both the methods have their disadvantages, and accordingly their applications are limited. In the paper we have investigated the dependence of the sensitivities of both the methods on the thin-film thickness and refractive index, the objective numerical aperture, and the incident light spectral range of VSWLI. The relation of the Fresnel reflection coefficients on the wavelength effect is also discussed. Some important research results reveal that the combination of both Fourier amplitude and nonlinear phase methods may provide a new approach to improve the VSWLI measurement sensitivity for thin-film thickness profile.
Inspection of defects with micrometer level on large aperture surfaces with hundreds of millimeters is one of the challenges in surface quality evaluation. Various microscopic imaging methods have been applied to inspecting the surface defects, while they are time-consuming for the small field of view and the sub-aperture stitching. To tackle this problem, a high-speed line scanning system based on the dark-field laser scattering method is proposed. The laser beam is scanned by the rotating polygon mirror to a laser line for high throughput and then the telecentric F-theta lens converges each incoming laser beam to a focused spot that creates a high intensity to enhance the signal-to-noise ratio. The scattered light from surface defect is collected by the designed integrating sphere for low background noise and the scattering signal is detected for each focused spot at a proper acquisition rate by a photomultiplier (PMT) detector with extremely short response time. In the meanwhile, the tested surface is moving perpendicular to the laser line to realize high-speed large area inspection. The defect inspection system is confirmed experimentally with laser line length of 60 mm, minimum detectable size less than 0.5 μm, and figure of merit of 9.6 cm s μm. The work put forward an effective method for automatic discovery of surface defects such as scratches, digs, and contaminants on large aperture surfaces.
Laser-induced breakdown spectroscopy (LIBS) quantitative measurement is harassed by the variability of collected spectra, and the matrix effect of sample is the main reason. The surface geometric morphology of the...
The simultaneous determination of t, n(λ), and κ(λ) of thin films can be a tough task for the high correlation of fit parameters. The strong assumptions about the type of dispersion relation are commonly used as a consequence to alleviate correlation concerns by reducing the free parameters before the nonlinear regression analysis. Here we present an angle-resolved spectral reflectometry for the simultaneous determination of weakly absorbing thin film parameters, where a reflectance interferogram is recorded in both angular and spectral domains in a single-shot measurement for the point of the sample being illuminated. The variations of the phase recovered from the interferogram as functions of t, n, and κ reveals that the unwrapped phase is monotonically related to t, n, and κ, thereby allowing the problem of correlation to be alleviated by multiple linear regression. After removing the 2π ambiguity of the unwrapped phase, the merit function based on the absolute unwrapped phase performs a 3D data cube with variables of t, n and κ at each wavelength. The unique solution of t, n, and κ can then be directly determined from the extremum of the 3D data cube at each wavelength with no need of dispersion relation. A sample of GaN thin film grown on a polished sapphire substrate is tested. The experimental data of t and [n(λ), κ(λ)] are confirmed by the scanning electron microscopy and the comparison with the results of other related works, respectively. The consistency of the results shows the proposed method provides a useful tool for the determination of the thickness and optical constants of weakly absorbing thin films.
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