The World Wide Web gains more and more popularity within China with more than 1.31 million websites on the Chinese Web in June 2007. Driven by the economic profits, cyber criminals are on the rise and use the Web to exploit innocent users. In fact, a real underground black market with thousand of participants has developed which brings together malicious users who trade exploits, malware, virtual assets, stolen credentials, and more. In this paper, we provide a detailed overview of this underground black market and present a model to describe the market. We substantiate our model with the help of measurement results within the Chinese Web. First, we show that the amount of virtual assets traded on this underground market is huge. Second, our research proofs that a significant amount of websites within China's part of the Web are malicious: our measurements reveal that about 1.49% of the examined sites contain some kind of malicious content.

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This paper investigates the potential of tunnel field-effect transistors (TFETs), with emphasis on short-gate TFETs, by simulation for low-power digital applications having a supply voltage lower than 0.5 V. A transient study shows that the tunneling current has a negligible contribution in charging and discharging the gate capacitance of TFETs. In spite of a higher resistance region in the short-gate TFET, the gate (dis)charging speed still meets low-voltage application requirements. A circuit analysis is performed on short-gate TFETs with different materials, such as Si, Ge and heterostructures in terms of voltage overshoot, delay, static power, energy consumption and energy delay product (EDP). These results are compared to MOSFET and full-gate TFET performance. It is concluded that short-gate heterostructure TFETs (Ge-source for nTFET, In 0.6 Ga 0.4 As-source for pTFET) are promising candidates to extend the supply voltage to lower than 0.5 V because they combine the advantage of a low Miller capacitance, due to the short-gate structures, and strong drive current in TFETs, due to the narrow bandgap material in the source. At a supply voltage of 0.4 V and for an EOT and channel length of 0.6 nm and 40 nm, respectively, a three-stage inverter chain based on short-gate heterostructure TFETs saves 40% energy consumption per cycle at the same delay and shows 60%-75% improvement of EDP at the same static power, compared to its full-gate counterpart. When compared to the MOSFET, better EDP can be achieved in the heterostructure TFET especially at low static power consumption.

Random telegraph signal (RTS) noise is experimentally investigated in silicon nanowire transistors (SNWTs) fabricated with complementary-metal-oxide-semiconductor compatible top-down approach. The observed RTS is found to have Coulomb-blockade characteristics rather than those described by conventional Shockley–Read–Hall theory. The capture and emission time constants of oxide traps strongly depend on the gate bias due to strong quantum confinement and enhanced electrical field in nanowire structures. Amplitude of single RTS in SNWTs is found within 10%, while large amplitude of multilevel RTS up to 34% at room temperature is observed due to the ultranarrow channel and the behavior of independent multitraps in SNWTs. Widely spread time constants of oxide traps and slow RTS of very long-time constants (several hundred seconds) are also observed in SNWTs.