The high-k Ta2O5 films deposited on the polycrystalline silicon treated with different postrapid thermal annealing temperatures were formed as high-k interdielectrics. Physical and electrical characteristics of the Ta2O5 dielectrics were investigated with x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, and electrical analysis. The annealing at 800 °C was found to be the optimal condition to reduce the defects and interface traps existed in the interface between the Ta2O5 dielectric and polysilicon to fabricate a well-crystallized film with higher breakdown field, lower leakage current and smaller charge trapping rate. This Ta2O5 dielectric shows promise for future generation of nonvolatile memory.

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The high- k Gd2normalO3 films deposited on polycrystalline silicon treated with different post rapid thermal annealing (RTA) temperatures were formed as high- k interdielectrics. A combinational electrical and material analysis on the samples was performed to obtain a thorough understanding of annealing effect on the high- k Gd2normalO3 interdielectrics. The annealing temperature at 900°C was the optimal condition to reduce the defects and interface traps and hence improve material quality to fabricate a well-crystallized film. This high- k Gd2normalO3 interdielectric shows promise for future generation of nonvolatile memory applications.

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The high-k Ta 2 O 5 in our study is used to apply as gate dielectric in polyoxide and low-temperture polycrystalline silicon thin-film transistor (LTPS-TFT) for performance improvements. Therefore, we employ the NH 3 -plasma treatment to improve the electrical characteristics of the high-k Ta 2 O 5 polyoxide dielectric such as higher breakdown voltage and lower leakage current. It's seen that the nitrogen can pile up at the high-k Ta 2 O 5 dielectric and polysilicon interface to form strong Si-N bondings from the SIMS and XPS analysis.