We conduct a comprehensive density functional theory investigation using r2SCAN-rVV10 functional on the structural stability and electrochemical properties of Boridenes for their use as the anode materials in the rechargeable...

Although substantial efforts have been made, controllable synthesis of p-type WS2 remains a challenge. In this work, we employ NaCl as a seeding promoter to realize vapor–liquid–solid (VLS) growth of p-type WS2. Morphological evolution, including a one-dimensional (1D) nanowire to two-dimensional (2D) planar domain and 2D shape transition of WS2 domains, can be well-controlled by the growth temperature and sulfur introduction time. A high growth temperature is required to enable planar growth of 2D WS2, and a sulfur-rich environment is found to facilitate the growth of high-quality WS2. Raman and photoluminescence (PL) mappings demonstrate uniform crystallinity and high quantum efficiency of VLS-grown WS2. Moreover, monolayer WS2-based field-effect transistors (FETs) are fabricated, showing p-type conducting behavior, which is different from previous reported n-type FETs from WS2 grown by other methods. First-principles calculations show that the p-type behavior originates from the substitution of Na at the W site, which will form an additional acceptor level above the valence band maximum (VBM). This facile VLS growth method opens the avenue to realize the p–n WS2 homojunctions and p/n-WS2-based heterojunctions for monolayer wearable electronic, photonic, optoelectronic, and biosensing devices and should also be a great benefit to the development of 2D complementary metal–oxide–semiconductor (CMOS) circuit applications.

The violet phosphorus has been proven to be the most stable phosphorus allotrope and attracted much attention recently. The growth of violet phosphorus with large lateral sizes is crucial to...