Black phosphorus (BP) has drawn enormous attention for both intriguing material characteristics and electronic and optoelectronic applications. In spite of excellent advantages for semiconductor device applications, the performance of BP devices is hampered by the formation of phosphorus oxide on the BP surface under ambient conditions. It is thus necessary to resolve the oxygen-induced degradation on the surface of BP to recover the characteristics and stability of the devices. To solve this problem, it is demonstrated that a 1,2-ethanedithiol (EDT) treatment is a simple and effective way to remove the bubbles formed on the BP surface. The device characteristics of the degraded BP field-effect transistor (FET) are completely recovered to the level of the pristine cases by the EDT treatment. The underlying principle of bubble elimination on the BP surface by the EDT treatment is systematically analyzed by density functional theory calculation, atomic force microscopy, and X-ray photoelectron spectroscopy analysis. In addition, the performance of the hexagonal boron nitride-protected BP FET is completely retained without changing device characteristics even when exposed to 30 d or more in air. The EDT-induced recovering effect will allow a new route for the optimization of electronic and optoelectronic devices based on BP.
We studied the interaction of di-isopropylaminosilane (SiH3N(C3H7)2, DIPAS) molecules with a fully hydroxyl-terminated Si (001) surface for SiO2 thin-film growth by using density functional theory. The amino group consisting of DIPAS was chosen in order to obtain a high adsorption energy because its lone-pair electrons in the N atom would help in the adsorption of DIPAS. The absolute value of the adsorption energy (0.67 eV) of DIPAS was higher than its reaction energy barrier of 0.38 eV. Thus, DIPAS could react with the surface without desorption. The reaction between DIPAS and the surface produced a silyl group (-SiH3) as a primary product and di-isopropylamine (NH(C3H7)2, DIPA) as a by-product. A second DIPAS, which was adsorbed near the pre-adsorbed DIPAS or -SiH3 with DIPA, required higher reaction energy barriers of 3.91 or 1.92 eV, respectively, because of its interaction with the first DIPAS or DIPA. However, when the second DIPAS was adsorbed near -SiH3 without DIPA, a low reaction energy barrier of 0.42 eV was required, indicating a negligible effect of -SiH3 on the second DIPAS reaction. Therefore, to obtain a highly dense Si layer, DIPA must desorb from the surface. DIPA requires a relatively high desorption energy of 0.40 eV because the lone-pair electrons in the N atom of DIPA also enhance its adsorption on the surface. The high desorption energy could reduce the process window of atomic layer deposition.
We studied 3 BaZrO 3 (210)[001] tilt grain boundaries using density functional theory and a space charge layer model. Formation enthalpies of BaZrO 3 and competing oxides were calculated using fitted elemental-phase reference energy (FERE) correction, and a stable region of BaZrO 3 , as functions of Ba and O chemical potentials, was determined. Grain boundary energies were evaluated as functions of Ba and O chemical potentials within the determined stable region of BaZrO 3 from the FERE correction. Among the six tested grain boundaries, an energetically favorable nonstoichiometric grain boundary was determined. Based on the nonstoichiometric grain boundary, we calculated the electrostatic potential and concentrations of proton and oxygen vacancy using a space charge layer model.
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