A reduced graphene oxide field‐effect transistor (R‐GO FET) device has a uniform self‐assembled and networked channel of R‐GO nanosheets that are highly responsive to physical stimuli such as temperature variations and infrared irradiation. The charge‐transport mechanisms of the networked R‐GO thin film include charge tunneling through the nanosheet junction and charge‐hopping transport. Under a thermal or infrared (IR) stimulus, the charge carriers generated by thermal or IR activation contribute to changes in the charge transport inside the networked R‐GO thin film.

No abstract