Transparent conductive 5 at.% Ga-doped ZnO (GZO) thin films are deposited on a glass substrate by an asymmetrical bipolar-pulsed DC magnetron sputtering at various substrate temperatures. All the GZO films have nanocrystalline structure and compact surface morphology. A highly c-axis oriented GZO film was grown perpendicular to the substrate at the 200 • C. The measured work function of GZO film deposited at 200 • C shows slightly lower value of 4.37 eV than a commercial ITO film of 4.6 eV. The GZO film showed the lowest sheet resistance of 35 / , a carrier concentration of 1.2 × 10 21 cm −3 , a mobility of 9.9 cm 2 /Vs, and high optical transmittance of over 85% in the visible range. It indicates that the GZO films at 200 • C can be promising as an alternative to ITO thin film for transparent electrode applications.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.