Over the past few decades, flexible sensors have been developed from the "electronic" level to the "iontronic" level, and gradually to the "ionic" level. Ionic flexible sensors (IFS) are one kind of advanced sensors that are based on the concept of ion migration. Compared to conventional electronic sensors, IFS can not only replicate the topological structures of human skin, but also are capable of achieving tactile perception functions similar to that of human skin, which provide effective tools and methods for narrowing the gap between conventional electronics and biological interfaces. In this review, the latest research and developments on several typical sensing mechanisms, compositions, structural design, and applications of IFS are comprehensively reviewed. Particularly, the development of novel ionic materials, structural designs, and biomimetic approaches has resulted in the development of a wide range of novel and exciting IFS, which can effectively sense pressure, strain, and humidity with high sensitivity and reliability, and exhibit self-powered, self-healing, biodegradability, and other properties of the human skin. Furthermore, the typical applications of IFS in artificial skin, human-interactive technologies, wearable health monitors, and other related fields are reviewed. Finally, the perspectives on the current challenges and future directions of IFS are presented.

Microfabrication techniques common in commercial semiconductor manufacturing were used to produce carbon/nitroazobenzene/Cu/Au molecular junctions with a range of areas from 3×3 to 400×400 μm, starting with 100-mm-diameter silicon wafers. The approach exhibited high yield (90-100%) and excellent reproducibility of the current density (relative standard deviation of typically 15%) and 32 devices on a chip. Electron-beam-deposited carbon films are introduced as substrates and may be applied at the full wafer level before dicing and electrochemical deposition of the molecular layer. The current scaled with the device area over a factor of >600, and the current density was quantitatively consistent with structurally similar molecular junctions made by other techniques. The current densities were weakly dependent on temperature over the range of 100-390 K, and maximum current densities above 400 A/cm2 were observed without breakdown. To simulate processing and operation conditions, the junction stability was tested at elevated temperatures. The JV curves of microfabricated junctions were unchanged after 22 h at 100 °C. A ∼50% increase in the current density was observed after 20 h at 150 °C but then remained constant for an additional 24 h. Parallel fabrication, thermal stability, and high yield are required for practical applications of molecular electronics, and the reported results provide important steps toward integration of molecular electronic devices with commercial processes and devices.

For dielectric elastomers (DEs), the inherent viscoelasticity leads to a time-dependent deformation during actuation. To describe such a viscoelastic behavior, a constitutive model is developed by utilizing a combined Kelvin-Voigt-Maxwell (KVM) model. The established model captures both the initial jumping deformation and the following slow creeping. Subsequently, with an employment of VHB 4910 elastomer, experiments are performed to validate the viscoelastic KVM model. The results indicate a good agreement between the simulation and experimental data. Effect of the parameters in KVM model on the viscoelastic deformation of DEs is also investigated.