Two extremely bulky bis(aryl)amines, HN(Ar*)(Ph) (HLPh) and HN(Ar*)(Mes) (HLMes) (Ar* = C6H2{C(H)Ph2}2Me-2,6,4; Mes = mesityl),
have been prepared by palladium-catalyzed cross-coupling reactions
and structurally characterized. These have been utilized in the preparation
of the amido-germanium(II) chlorides, [LPhGeCl] and [LMesGeCl]. Reactions of these, and the known complex, [L′GeCl]
(L′ = −N(Ar*)(SiMe3)), with Na[CpMo(CO)3] have afforded the first examples of structurally characterized
two-coordinate molybdenum substituted germylenes, [Cp(CO)3MoGeN(Ar*)(R)] (R = SiMe3 or Ph). The former readily eliminates
a molecule of CO when heated or irradiated with UV light to give an
unprecedented amino-germylyne complex, [Cp(CO)2MoGeN(Ar*)(SiMe3)]. The spectroscopic and structural data for this complex,
in combination with the results of computational studies, show that
this compound is best viewed as having a bent Mo–Ge “triple”
bond, with little multiple bond character to its Ge–N interaction.
Computational studies have also indicated that the Mo–Ge–N
bending in the complex is due to the extreme steric bulk of its amido
substituent.
We report new structural motifs for Cu nanoclusters that conceptually represent seed crystals for large face-centred cubic (FCC) crystal growth. Kinetically controlled syntheses, high resolution mass spectrometry experiments for determination of the dication formulae and crystallographic characterisation were carried out for [Cu H (DPPE) ][BF ][Cl] (DPPE=bis(diphenylphosphino)ethane) and [Cu H (DPPA) ][(BF ) ] (DPPA=bis(diphenylphosphino)amine) polyhydrido nanoclusters, which feature the unprecedented bifrustum and frustum metal-core architecture in metal nanoclusters. The Cu nanocluster contains two Cu frustum cupolae and the Cu nanocluster has one Cu frustum cupola and a Cu distorted hexagonal-shape base. Gas-phase experiments revealed that both Cu H and Cu H cores can spontaneously release H upon removal of one bisphosphine capping ligand.
Aluminum nitride ( AlN ) thin films were deposited on Si (111) substrates by low pressure metalorganic chemical vapor deposition system. The effects of the V/III ratios on the film structure and surface morphology were systematically studied. The chemical states and vibration modes of AlN films were characterized by X-ray photoelectron spectroscopy and Fourier transform infrared spectrometer. The optical absorption property of the AlN films, characterized by ultraviolet-visible-near infrared spectrophotometer, exhibited a sharp absorption near the wavelength of 206 nm. The AlN (002) preferential orientation growth was obtained at the V/III ratio of 10,000 and the preferential growth mechanism is presented in this paper according to the thermodynamics and kinetics process of the AlN growth.
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