Organic host-guest doping materials with room temperature phosphorescence (RTP) phenomenon have attracted considerable attention. However, it was still challenging to investigate their corresponding luminescence mechanism, because host-guest system very difficult...

Ultralong organic room-temperature phosphorescence (RTP) materials have attracted great attention recently due to its diverse application potentials. Several ultralong organic RTP materials mimicking the host-guest architecture of inorganic systems have been exploited successfully. However, complicated synthesis and high expenditure are still inevitable in these cases. Herein, we develop a series of novel host-guest organic phosphore systems, in which all chromophores are electron-rich, commercially available and halogen atom free. The maximum phosphorescence efficiency and the longest lifetime reach at 23.6% and 362 ms, respectively. Most importantly, experimental results and theoretical calculation indicate that the host molecules not only play a vital role in providing a rigid environment to suppress non-radiative decay of the guest, but also show a synergistic effect to the guest through Förster energy transfer (FERT). The commercial availability, facile preparation and unique properties also make these new host-guest materials an excellent candidate for anti-counterfeiting devices. File list (3) download file view on ChemRxiv Manuscript-20201025.docx (0.94 MiB) download file view on ChemRxiv Manuscript-20201025.pdf (770.76 KiB) download file view on ChemRxiv Supporting Information-20201025.docx (1.53 MiB)

Circular dichroism behavior was regulated by controlling the molecular conformation of BINOL derivatives, and tunable solid-state circularly polarized luminescence was achieved.

Organic light‐emitting transistors (OLETs), integrating the functions of an organic field‐effect transistor (OFET) and organic light‐emitting diode (OLED) in a single device, are promising for the next‐generation display technology. However, the great challenge of achieving uniform area emission in OLETs with good stability and arbitrary tunability hinders their development in this field. Herein, an effective solution to obtain well‐defined area emission in lateral OLETs by incorporating a charge‐transport buffer (CTB) layer between the conducting channel and emitting layer is proposed. Comprehensive theoretical simulation and experimental results demonstrate redistributed potential beneath the drain electrode under the shielding effect of the CBT layer, resulting in a highly uniform current density. In this case, uniform recombination of balanced holes and electrons can be guaranteed, which is essential for the formation of area emission in the following OLETs. RGB OLETs with uniform area emission are constructed, which show good gate tunable ability (ON/OFF ratio 106), high loop stability (over 200 cycles) and high aperture ratio (over 80%) due to the arbitrary tunability of the device geometry. This work provides a new avenue for constructing area‐emission lateral OLETs, which have great potential for display technology because of their good compatibility with conventional fabrication techniques.